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Número de pieza | BCR08AS-12 | |
Descripción | TRIAC | |
Fabricantes | Renesas Technology | |
Logotipo | ||
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BCR08AS-12
Triac
Low Power Use
Features
• IT (RMS) : 0.8 A
• VDRM : 600 V
• IFGTI, IRGTI, IRGT : 5 mA
• IFGT : 10 mA
Outline
REJ03G0292-0200
Rev.2.00
Mar 22, 2007
• Non-Insulated Type
• Planar Passivation Type
• Completed Pb Free
RENESAS Package code: PLZZ0004CA-A
(Package name: UPAK)
3
2
1
4
RENESAS Package code: PLZZ0004CB-A
(Package name: SOT-89)
4
1
2
3
2, 4
3
1
1. T1 Terminal
2. T2 Terminal
3. Gate Terminal
4. T2 Terminal
Applications
Hybrid IC, solid state relay, electric fan, washing machine, and other general purpose control applications
Maximum Ratings
Parameter
Repetitive peak off-state voltageNote1
Non-repetitive peak off-state voltageNote1
Symbol
VDRM
VDSM
Voltage class
12 (Mark BF)
600
720
Unit
V
V
Parameter
RMS on-state current
Surge on-state current
I2t for fusing
Peak gate power dissipation
Average gate power dissipation
Peak gate voltage
Peak gate current
Junction temperature
Storage temperature
Mass
Notes: 1. Gate open.
Symbol
IT (RMS)
ITSM
I2t
PGM
PG (AV)
VGM
IGM
Tj
Tstg
—
Ratings
0.8
8
0.26
1
0.1
10
1
– 40 to +125
– 40 to +125
50
Unit
A
A
A2s
W
W
V
A
°C
°C
mg
Conditions
Commercial frequency, sine full wave
360° conduction, Ta = 40°CNote3
60Hz sinewave 1 full cycle, peak value,
non-repetitive
Value corresponding to 1 cycle of half
wave 60Hz, surge on-state current
Typical value
REJ03G0292-0200 Rev.2.00 Mar 22, 2007
Page 1 of 7
1 page BCR08AS-12
Breakover Voltage vs.
Rate of Rise of Off-State Voltage
160
Typical Example
140 Tj = 125°C
120
I Quadrant
100
80
60
III Quadrant
40
20
0
100 2 3 5 7 101 2 3 5 7 102 2 3 5 7 103
Rate of Rise of Off-State Voltage (V/µs)
Gate Trigger Current vs.
Gate Current Pulse Width
103
7 Typical Example
5
4
3
2
102
7 IRGT I IRGT III IFGT I
5
4
IFGT III
3
2
101100 2 3 4 5 7 101 2 3 4 5 7 102
Gate Current Pulse Width (µs)
Commutation Characteristics
101
7 Typical Example
5 Tj = 125°C
IT = 1A
3 τ = 500µs
2 VD = 200V
100
7
5
3
Minimum
Characteristics
2 Value
III Quadrant
I Quadrant
10–1
10–1 2 3 5 7 100 2 3 5 7 101
Rate of Decay of On-State
Commutating Current (A/ms)
Gate Trigger Characteristics Test Circuits
6Ω 6Ω
6V A
6V A
V 330Ω
V 330Ω
Test Procedure I
6Ω
Test Procedure II
6Ω
6V A
6V A
V 330Ω
V 330Ω
Test Procedure III
Test Procedure IV
REJ03G0292-0200 Rev.2.00 Mar 22, 2007
Page 5 of 7
5 Page |
Páginas | Total 8 Páginas | |
PDF Descargar | [ Datasheet BCR08AS-12.PDF ] |
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