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PDF UPA2650T1E Data sheet ( Hoja de datos )
| Número de pieza | UPA2650T1E | |
| Descripción | MOS FIELD EFFECT TRANSISTOR | |
| Fabricantes | NEC | |
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DATA SHEET
MOS FIELD EFFECT TRANSISTOR
μ PA2650T1E
DUAL N-CHANNEL MOSFET
FOR SWITCHING
DESCRIPTION
The μ PA2650T1E is a switching device, which can be driven
directly by a 4.5 V power source.
The μ PA2650T1E contains dual MOSFET which features a
low on-state resistance and excellent switching characteristics,
and is suitable for applications such as DC/DC converter of
portable machine and so on.
FEATURES
• 4.5 V drive available MOSFET
• Low on-state resistance MOSFET
MOSFET1 RDS(on)1 = 48 mΩ TYP. (VGS = 10 V, ID = 3.0 A)
RDS(on)2 = 55 mΩ TYP. (VGS = 4.5 V, ID = 3.0 A)
MOSFET2 RDS(on)1 = 50 mΩ TYP. (VGS = 10 V, ID = 3.0 A)
RDS(on)2 = 57 mΩ TYP. (VGS = 4.5 V, ID = 3.0 A)
PIN CONNECTION (Top View)
16
MOSFET1
25
3 4 MOSFET2
1: Gate1
2: Drain1/Source2 (Heat sink2)
3: Gate2
4: Drain2 (Heat sink1)
5: Drain1/Source2 (Heat sink2)
6: Source1
ORDERING INFORMATION
PART NUMBER
μ PA2650T1E
Marking: A2650
PACKAGE
6LD3x3MLP
Remark The diode connected between the gate and source of the transistor serves as a protector against ESD. When
this device actually used, an additional protection circuit is externally required if a voltage exceeding the rated
voltage may be applied to this device.
Caution This product is electrostatic-sensitive device due to low ESD capability and should be handled with
caution for electrostatic discharge.
VESD = ±150 V TYP. (C = 200 pF, R = 0 Ω, Single Pulse)
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
Document No. G18749EJ1V0DS00 (1st edition)
Date Published May 2007 NS CP(K)
Printed in Japan
2007
1 page  
μ PA2650T1E
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
15
VGS = 10 V
4.5 V
10
2.5 V
5
Pulsed
0
0 0.5 1
VDS - Drain to Source Voltage - V
FORWARD TRANSFER CHARACTERISTICS
100
10
TA = −25°C
25°C
1 75°C
125°C
0.1
0.01
0
VDS = 10 V
Pulsed
0.5 1 1.5 2 2.5
VGS - Gate to Source Voltage - V
3
GATE TO SOURCE THRESHOLD VOLTAGE vs.
CHANNEL TEMPERATURE
1.5
VDS = VGS
ID = 0.25 mA
1
0.5
0
-50 -25 0 25 50 75 100 125 150
Tch - Channel Temperature - °C
FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT
10
TA = −25°C
25°C
75°C
125°C
1
0.1
0.01
VDS = 10 V
Pulsed
0.1 1
ID - Drain Current - A
10
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
DRAIN CURRENT
100
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
DRAIN CURRENT
100
80
60 4.5 V
40 10 V
80
60 4.5 V
40 10 V
20
0
0.01
MOSFET1
Pulsed
0.1 1 10
ID - Drain Current - A
100
20
0
0.01
MOSFET2
Pulsed
0.1 1 10
ID - Drain Current - A
100
Data Sheet G18749EJ1V0DS
5
5 Page | ||
| Páginas | Total 9 Páginas | |
| PDF Descargar | [ Datasheet UPA2650T1E.PDF ] | |
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