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PDF UPA2451C Data sheet ( Hoja de datos )
| Número de pieza | UPA2451C | |
| Descripción | MOS FIELD EFFECT TRANSISTOR | |
| Fabricantes | NEC | |
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DATA SHEET
MOS FIELD EFFECT TRANSISTOR
μ PA2451C
N-CHANNEL MOS FIELD EFFECT TRANSISTOR
FOR SWITCHING
DESCRIPTION
The μ PA2451C is a switching device, which can be driven directly
by a 2.5 V power source.
The μ PA2451C features a low on-state resistance and excellent
switching characteristics, and is suitable for applications such as
power switch of portable machine and so on.
PACKAGE DRAWING (Unit: mm)
16
25
34
FEATURES
• 2.5 V drive available
• Low on-state resistance
RDS(on)1 = 20.0 mΩ MAX. (VGS = 4.5 V, ID = 4.0 A)
RDS(on)2 = 21.0 mΩ MAX. (VGS = 4.0 V, ID = 4.0 A)
RDS(on)3 = 25.0 mΩ MAX. (VGS = 3.1 V, ID = 4.0 A)
RDS(on)4 = 32.0 mΩ MAX. (VGS = 2.5 V, ID = 4.0 A)
• Built-in G-S protection diode against ESD
4.4±0.1
5.0±0.1
7
(0.15)
(0.9)
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Drain to Source Voltage (VGS = 0 V)
VDSS
30.0
Gate to Source Voltage (VDS = 0 V)
Drain Current (DC) Note1
Drain Current (pulse) Note2
Total Power Dissipation (2 units) Note1
Total Power Dissipation (2 units) Note3
VGSS
ID(DC)
ID(pulse)
PT1
PT2
±12.0
±8.2
±60.0
2.5
0.7
Channel Temperature
Tch 150
Storage Temperature
Tstg −55 to +150
V
V
A (0.5)
A
W
W
°C
°C
(2.2)
Each lead has same dimensions.
1,2: Source 1
5,6: Source 2
3: Gate 1
4: Gate 2
7: Drain
EQUIVALENT CIRCUIT
Notes 1. Mounted on ceramic board of 50 cm2 x 1.1 mmt
2. PW ≤ 10 μs, Duty Cycle ≤ 1%
3. Mounted on FR-4 board of 50 cm2 x 1.1 mmt
Gate1
Drain1
Body
Diode Gate2
Drain2
Body
Diode
ORDERING INFORMATION
PART NUMBER
LEAD PLATING
PACKING
PACKAGE
Gate
Protection
Diode
Source1
Gate
Protection
Diode
Source2
μ PA2451CTL-E1-A Note
μ PA2451CTL-E2-A Note
Sn-Bi
Reel
3000 p/reel
6PIN HWSON (4521)
Note Pb-free (This product does not contain Pb in the external electrode and other parts.)
Remark The diode connected between the gate and source of the transistor serves as a protector against ESD.
When this device actually used, an additional protection circuit is externally required if a voltage exceeding
the rated voltage may be applied to this device.
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
Document No. G18793EJ1V0DS00 (1st edition)
Date Published July 2007 NS
Printed in Japan
2007
1 page  
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
40
VGS = 2.5 V
30 3.1 V
20
10
0
-50
4.0 V
4.5 V
ID = 4.0 A
Pulsed
0 50 100
Tch - Channel Temperature - °C
150
1000
100
SWITCHING CHARACTERISTICS
td(off)
tf
VDD = 15.0 V
VGS = 4.0 V
RG = 6 Ω
tr td(on)
10
0.1
1 10
ID - Drain Current - A
100
SOURCE TO DRAIN DIODE
FORWARD VOLTAGE
100
10
1
0.1
VGS = 0 V
Pulsed
0.01
0 0.2 0.4 0.6 0.8
1
VF(S-D) - Source to Drain Voltage - V
1.2
μ PA2451C
CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE
1000
Ciss
100
Coss
VGS = 0 V
f = 1.0 MHz
10
0.1 1
Crss
10 100
VDS - Drain to Source Voltage - V
DYNAMIC INPUT CHARACTERISTICS
4
VDD = 6.0 V
3
15.0 V
24.0 V
2
1
ID = 8.2 A
0
02468
QG - Gate Charge - nC
Data Sheet G18793EJ1V0DS
5
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet UPA2451C.PDF ] | |
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