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PDF TIM1011-4L Data sheet ( Hoja de datos )
| Número de pieza | TIM1011-4L | |
| Descripción | MICROWAVE POWER GaAs FET | |
| Fabricantes | Toshiba Semiconductor | |
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MICROWAVE SEMICONDUCTOR
TECHNICAL DATA
MICROWAVE POWER GaAs FET
TIM1011-4L
FEATURES
HIGH POWER
BROAD BAND INTERNALLY MATCHED FET
P1dB=36.5dBm at 10.7GHz to 11.7GHz
HIGH GAIN
HERMETICALLY SEALED PACKAGE
G1dB=7.5dB at 10.7GHz to 11.7GHz
RF PERFORMANCE SPECIFICATIONS ( Ta= 25°C )
CHARACTERISTICS SYMBOL CONDITIONS
UNIT MIN. TYP. MAX.
Output Power at 1dB Gain P1dB
dBm 35.5 36.5 ⎯
Compression Point
Power Gain at 1dB Gain
Compression Point
Drain Current
G1dB
VDS= 9V
dB 6.5 7.5 ⎯
f= 10.7 to 11.7GHz
IDS1
A ⎯ 1.7 2.2
Gain Flatness
Power Added Efficiency
3rd Order Intermodulation
Distortion
Drain Current
ΔG
ηadd
IM3
IDS2
dB ⎯ ⎯ ±0.8
% ⎯ 24 ⎯
Two-Tone Test
dBc -42 -45 ⎯
Po=25.0 dBm
(Single Carrier Level)
A
⎯ 1.7 2.2
Channel Temperature Rise ΔTch (VDS x IDS + Pin – P1dB) °C ⎯ ⎯ 70
x Rth(c-c)
Recommended gate resistance(Rg) : Rg= 150 Ω(MAX.)
ELECTRICAL CHARACTERISTICS ( Ta= 25°C )
CHARACTERISTICS
SYMBOL
CONDITIONS
UNIT MIN. TYP. MAX.
Transconductance
gm VDS= 3V
mS ⎯ 1200 ⎯
IDS= 2.0A
Pinch-off Voltage
VGSoff VDS= 3V
V -2.0 -3.5 -5.0
IDS= 60mA
Saturated Drain Current
IDSS VDS= 3V
A ⎯ 4.0 ⎯
VGS= 0V
Gate-Source Breakdown
VGSO IGS= -60μA
V -5 ⎯ ⎯
Voltage
Thermal Resistance
Rth(c-c) Channel to Case
°C/W ⎯ 2.9 3.5
The information contained herein is presented only as a guide for the applications of our products. No responsibility is
assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may results from its use,
No license is granted by implication or otherwise under any patent or patent rights of TOSHIBA or others.
The information contained herein is subject to change without prior notice. It is therefor advisable to contact TOSHIBA
before proceeding with design of equipment incorporating this product.
Rev. Sep. 2006
1 page | ||
| Páginas | Total 4 Páginas | |
| PDF Descargar | [ Datasheet TIM1011-4L.PDF ] | |
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