DataSheet.es    


PDF NP82N055EHE Data sheet ( Hoja de datos )

Número de pieza NP82N055EHE
Descripción (NP82N055xHE) MOS FIELD EFFECT TRANSISTOR SWITCHING SWITCHING
Fabricantes NEC 
Logotipo NEC Logotipo



Hay una vista previa y un enlace de descarga de NP82N055EHE (archivo pdf) en la parte inferior de esta página.


Total 8 Páginas

No Preview Available ! NP82N055EHE Hoja de datos, Descripción, Manual

www.DataSheet4U.com
DATA SHEET
MOS FIELD EFFECT TRANSISTOR
NP82N055CHE,NP82N055DHE,NP82N055EHE,NP82N055KHE
SWITCHING
N-CHANNEL POWER MOS FET
DESCRIPTION
These products are N-channel MOS Field Effect Transistor
designed for high current switching applications.
FEATURES
Channel temperature 175 degree rated
Super low on-state resistance
RDS(on) = 8.6 mMAX. (VGS = 10 V, ID = 41 A)
Low Ciss: Ciss = 3500 pF TYP.
Built-in gate protection diode
ORDERING INFORMATION
PART NUMBER
PACKAGE
NP82N055CHE
TO-220AB
NP82N055DHE
TO-262
NP82N055EHE
5 NP82N055KHE
TO-263 (MP-25ZJ)
TO-263 (MP-25ZK)
(TO-220AB)
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Drain to Source Voltage (VGS = 0 V)
VDSS
55
V
Gate to Source Voltage (VDS = 0 V)
Drain Current (DC) Note1
Drain Current (pulse) Note2
VGSS
ID(DC)
ID(pulse)
±20
±82
±300
V
A
A
Total Power Dissipation (TA = 25°C)
PT
1.8 W
Total Power Dissipation (TC = 25°C)
PT
163 W
Channel Temperature
Tch 175 °C
Storage Temperature
Single Avalanche Current Note3
Single Avalanche Energy Note3
Tstg –55 to +175 °C
IAS
72 / 49 / 17
A
EAS 51 / 240 / 289 mJ
Notes 1. Calculated constant current according to MAX. allowable channel
temperature.
2. PW 10 µs, Duty cycle 1%
3. Starting Tch = 25°C, VDD = 28 V, RG = 25 , VGS = 20 0 V (See Figure 4.)
(TO-262)
(TO-263)
THERMAL RESISTANCE
Channel to Case Thermal Resistance
Channel to Ambient Thermal Resistance
Rth(ch-C)
Rth(ch-A)
0.92 °C/W
83.3 °C/W
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
Document No. D14138EJ5V0DS00 (5th edition)
Date Published December 2002 NS CP(K)
Printed in Japan
The mark 5 shows major revised points.
1999

1 page




NP82N055EHE pdf
NP82N055CHE,NP82N055DHE,NP82N055EHE,NP82N055KHE
Figure12. DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
18
Pulsed
16
14
12
VGS = 10 V
10
8
6
4
2
ID = 41 A
0
50 0 50 100 150
Tch - Channel Temperature - ˚C
1000
Figure13. SOURCE TO DRAIN DIODE
FORWARD VOLTAGE
Pulsed
VGS = 10 V
100
VGS = 0 V
10
1
0.1
0
0.5 1.0
VSD - Source to Drain Voltage - V
1.5
Figure14. CAPACITANCE vs. DRAIN TO
SOURCE VOLTAGE
100000
VGS = 0 V
f = 1 MHz
10000
Ciss
1000
100
0.1
Coss
Crss
1 10
VDS - Drain to Source Voltage - V
100
Figure15. SWITCHING CHARACTERISTICS
1000
tf
100
tr
10
td(off)
td(on)
1
0.1 1 10 100
ID - Drain Current - A
1000
Figure16. REVERSE RECOVERY TIME vs.
DRAIN CURRENT
di/dt = 100 A/µs
VGS = 0 V
100
10
1
0.1 1.0 10 100
IF - Drain Current - A
Figure17. DYNAMIC INPUT/OUTPUT CHARACTERISTICS
80 16
14
60 VGS 12
VDD = 44 V
28 V
10
11 V
40 8
6
20 4
2
VDS ID = 82 A
0
0
20 40 60
80
QG - Gate Charge - nC
Data Sheet D14138EJ5V0DS
5

5 Page










PáginasTotal 8 Páginas
PDF Descargar[ Datasheet NP82N055EHE.PDF ]




Hoja de datos destacado

Número de piezaDescripciónFabricantes
NP82N055EHE(NP82N055xHE) MOS FIELD EFFECT TRANSISTOR SWITCHING SWITCHINGNEC
NEC

Número de piezaDescripciónFabricantes
SLA6805M

High Voltage 3 phase Motor Driver IC.

Sanken
Sanken
SDC1742

12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters.

Analog Devices
Analog Devices


DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares,
permitiéndote verlos en linea o descargarlos en PDF.


DataSheet.es    |   2020   |  Privacy Policy  |  Contacto  |  Buscar