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PDF GL949 Data sheet ( Hoja de datos )
| Número de pieza | GL949 | |
| Descripción | PNP SILICON PLANAR HIGH CURRENT TRANSISTOR | |
| Fabricantes | GTM | |
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CORPORATION ISSUED DATE :2006/11/20
REVISED DATE :
GL949
PNP SILICON PLANAR HIGH CURRENT TRANSISTOR
Description
The GL949 is designed for general purpose switching and amplifier applications.
Features
6Amps continuous current, up to 20Amps pulse current
Very low saturation voltages
Package Dimensions
SOT-223
REF.
A
C
D
E
I
H
Millimeter
Min. Max.
6.70 7.30
2.90 3.10
0.02 0.10
0° 10°
0.60 0.80
0.25 0.35
REF.
B
J
1
2
3
4
5
Millimeter
Min. Max.
13°TYP.
2.30 REF.
6.30 6.70
6.30 6.70
3.30 3.70
3.30 3.70
1.40 1.80
Absolute Maximum Ratings at Ta = 25
Parameter
Symbol
Ratings
Unit
Junction Temperature
Tj
+150
Storage Temperature
Tstg
-55~+150
Collector to Base Voltage
VCBO
-50
V
Collector to Emitter Voltage
VCEO
-30
V
Emitter to Base Voltage
VEBO
-6
V
Collector Current (DC)
IC
-5.5
A
Collector Current (Pulse)
ICM
-20
A
Total Power Dissipation
PD
3
W
*The power which can be dissipated assuming the device is mounted in typical manner on a PCB with copper equal to 2 inches x 2 inches.
Electrical Characteristics (Ta = 25 , unless otherwise stated)
Symbol
Min. Typ. Max. Unit
Test Conditions
BVCBO
-50 - - V IC=-100uA , IE=0
BVCER
-50 - - V IC=-1uA, RB 1k
BVCEO
-30 - - V IC=-10mA, IB=0
BVEBO
-6 - - V IE=-100uA ,IC=0
ICBO
- - -50 nA VCB=-40V, IE=0
ICER
- - -50 nA VCB=-40V, R 1k
IEBO
- - -10 nA VEB=-6V, IC=0
*VCE(sat)1
- - -75 mV IC=-500mA, IB=-20mA
*VCE(sat)2
-
-
-140
mV IC=-1A, IB=-20mA
*VCE(sat)3
-
-
-270
mV IC=-2A, IB=-200mA
*VCE(sat)4
-
-
-440
mV IC=-5.5A, IB=-500mA
*VBE(sat)
- - -1.25 V IC=-5.5A, IB=-500mA
*VBE(on)
- - -1.06 V VCE=-1V, IC=-5.5A
*hFE1
100 -
-
VCE=-1V, IC=-10mA
*hFE2
100 - 300
VCE=-1V, IC=-1A
*hFE3
75 -
-
VCE=-1V, IC=-5A
*hFE4
- 35 -
VCE=-2V, IC=-20A
fT - 100 - MHz VCE=-10V, IC=-100mA, f=50MHz
Cob
- 122 -
pF VCB=-10V, IE=0, f=1MHz
GL949
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| PDF Descargar | [ Datasheet GL949.PDF ] | |
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