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PDF GL358 Data sheet ( Hoja de datos )
| Número de pieza | GL358 | |
| Descripción | NPN SILICON PLANAR HIGH CURRENT TRANSISTOR | |
| Fabricantes | GTM | |
| Logotipo |  |
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CORPORATION ISSUED DATE :2005/12/28
REVISED DATE :
GL358
NPN SILICON PLANAR HIGH CURRENT TRANSISTOR
Description
The GL358 is designed for general purpose switching and amplifier applications.
Features
6 Amps continuous current, up to 10Amps peak current
Excellent gain characteristic specified up to 10Amps
Very low saturation voltages
Package Dimensions
SOT-223
REF.
A
C
D
E
I
H
Millimeter
Min. Max.
6.70 7.30
2.90 3.10
0.02 0.10
0° 10°
0.60 0.80
0.25 0.35
REF.
B
J
1
2
3
4
5
Millimeter
Min. Max.
13°TYP.
2.30 REF.
6.30 6.70
6.30 6.70
3.30 3.70
3.30 3.70
1.40 1.80
Absolute Maximum Ratings at Ta = 25
Parameter
Symbol
Ratings
Unit
Junction Temperature
Tj
+150
Storage Temperature
Tstg
-55~+150
Collector to Base Voltage
VCBO
200
V
Collector to Emitter Voltage
VCEO
100
V
Emitter to Base Voltage
VEBO
6
V
Collector Current (DC)
IC
6
A
Collector Current (Pulse)
IC
10
A
Total Power Dissipation
PD
3
W
*The power which can be dissipated assuming the device is mounted in a typical manner on a P.C.B. with copper equal to 4
square inch minimum.
Electrical Characteristics(Ta = 25 ,unless otherwise stated)
Symbol
BVCBO
*BVCEO
BVEBO
ICBO
ICES
IEBO
*VCE(sat)1
*VCE(sat)2
*VCE(sat)3
*VBE(sat)
*VBE(on)
*hFE1
*hFE2
*hFE3
*hFE4
fT
Cob
Min.
200
100
6
-
-
-
-
-
-
-
-
100
100
50
20
-
-
Typ.
-
-
-
-
-
-
-
-
-
-
-
-
200
-
-
130
35
Max.
-
-
-
10
50
10
50
150
340
1.25
1.10
-
300
-
-
-
-
Unit
V
V
V
nA
nA
nA
mV
mV
mV
V
V
MHz
pF
Test Conditions
IC=100uA , IE=0
IC=10mA, IB=0
IE=100uA ,IC=0
VCB=150V, IE=0
VCES=100V
VEB=6V, IC=0
IC=100mA, IB=5mA
IC=2A, IB=100mA
IC=5A, IB=500mA
IC=5A, IB=500mA
VCE=2V, IC=5A
VCE=2V, IC=10mA
VCE=2V, IC=2A
VCE=2V, IC=4A
VCE=2V, IC=10A
VCE=10V, IC=100mA, f=50MHz
VCB=10V, IE=0, f=1MHz
GL358
Page: 1/2
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| Páginas | Total 2 Páginas | |
| PDF Descargar | [ Datasheet GL358.PDF ] | |
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