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PDF GL195A Data sheet ( Hoja de datos )
| Número de pieza | GL195A | |
| Descripción | PNP SILICON PLANAR MEDIUM POWER TRANSISTOR | |
| Fabricantes | GTM | |
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CORPORATION ISSUED DATE :2006/06/07
REVISED DATE :
GL195A
PNP SILICON PLANAR MEDIUM POWER TRANSISTOR
Description
The GL195A is designed for medium power amplifier applications.
Features
1 Amp continuous current
Complementary to GL194A
Package Dimensions
SOT-223
REF.
A
C
D
E
I
H
Millimeter
Min. Max.
6.70 7.30
2.90 3.10
0.02 0.10
0° 10°
0.60 0.80
0.25 0.35
REF.
B
J
1
2
3
4
5
Millimeter
Min. Max.
13°TYP.
2.30 REF.
6.30 6.70
6.30 6.70
3.30 3.70
3.30 3.70
1.40 1.80
Absolute Maximum Ratings at Ta = 25
Parameter
Symbol
Junction Temperature
Tj
Storage Temperature
Tstg
Collector to Base Voltage
VCBO
Collector to Emitter Voltage
VCEO
Emitter to Base Voltage
VEBO
Collector Current (DC)
IC
Collector Current (Pulse)
IC
Total Power Dissipation
PD
Ratings
+150
-55~+150
-40
-40
-5
-1
-2
2
Unit
V
V
V
A
A
W
Electrical Characteristics (Ta = 25
Symbol
Min.
Typ.
BVCBO
-40 -
*BVCEO
-40 -
BVEBO
-5 -
ICBO
--
ICES
--
IEBO
--
*VCE(sat)1
--
*VCE(sat)2
--
*VCE(sat)3
--
*VBE(sat)
--
*VBE(on)
--
*hFE1
300 -
*hFE2
300 -
*hFE3
250 -
*hFE4
160 -
*hFE5
30 -
fT 150 -
Cob - -
Classification Of hFE2
Rank
P
Range
300 ~ 700
Q
500 ~ 900
, unless otherwise stated)
Max.
Unit
Test Conditions
- V IC=-100uA , IE=0
- V IC=-10mA, IB=0
- V IE=-100uA ,IC=0
-100
nA VCB=-30V, IE=0
-100
nA VCES=-30V
-100
nA VEB=-4V, IC=0
-0.2 V IC=-100mA, IB=-1mA
-0.35
V IC=-500mA, IB=-20mA
-0.5 V IC=-1A, IB=-100mA
-1.1 V IC=-1A, IB=-50mA
-1.0 V VCE=-5V, IC=-1A
- VCE=-5V, IC=-1mA
900 VCE=-5V, IC=-100mA
- VCE=-5V, IC=-500mA
- VCE=-5V, IC=-1A
- VCE=-5V, IC=-2A
- MHz VCE=-10V, IC=-50mA, f=100MHz
10 pF VCB=-10V, IE=0, f=1MHz
*Measured under pulse condition. Pulse width=300 s, Duty Cycle
2%
GL195A
Page: 1/2
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