DataSheet.es    


PDF GJ01N60 Data sheet ( Hoja de datos )

Número de pieza GJ01N60
Descripción N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Fabricantes GTM 
Logotipo GTM Logotipo



Hay una vista previa y un enlace de descarga de GJ01N60 (archivo pdf) en la parte inferior de esta página.


Total 5 Páginas

No Preview Available ! GJ01N60 Hoja de datos, Descripción, Manual

www.DataSheet4U.com
Pb Free Plating Product
ISSUED DATE :2004/06/01
REVISED DATE :2005/01/28B
GJ01N60
N-CHANNEL ENHANCEMENT MODE POWER MOSFET
BVDSS
RDS(ON)
ID
600V
8
1.6A
Description
The GJ01N60 provide the designer with the best combination of fast switching.
The TO-252 package is universally preferred for all commercial-industrial surface mount applications and
suited for AC/DC converters.
Features
*Dynamic dv/dt Rating
*Simple Drive Requirement
*Repetitive Avalanche Rated
*Fast Switching
Package Dimensions
TO-252
Absolute Maximum Ratings
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
Continuous Drain Current, VGS@10V
Continuous Drain Current, VGS@10V
Pulsed Drain Current1
Total Power Dissipation
Linear Derating Factor
VGS
ID @TC=25
ID @TC=100
IDM
PD @TC=25
Single Pulse Avalanche Energy2
Avalanche Current
Repetitive Avalanche Energy
EAS
IAR
EAR
Operating Junction and Storage Temperature Range Tj, Tstg
Thermal Data
Parameter
Thermal Resistance Junction-case
Thermal Resistance Junction-ambient
Max.
Max.
Symbol
Rthj-c
Rthj-a
REF.
A
B
C
D
E
F
S
Millimeter
Min. Max.
6.40 6.80
5.20 5.50
6.80 7.20
2.40 3.00
2.30 REF.
0.70 0.90
0.60 0.90
REF.
G
H
J
K
L
M
R
Millimeter
Min. Max.
0.50 0.70
2.20 2.40
0.45 0.55
0 0.15
0.90 1.50
5.40 5.80
0.80 1.20
Ratings
600
±20
1.6
1
6
39
0.31
13
1.6
0.5
-55 ~ +150
Unit
V
V
A
A
A
W
W/
mJ
A
mJ
Value
3.2
110
Unit
/W
/W
GJ01N60
Page: 1/5

1 page




GJ01N60 pdf
ISSUED DATE :2004/06/01
REVISED DATE :2005/01/28B
Fig 13. Switching Time Circuit
Fig 14. Switching Time Waveform
Fig 15. Gate Charge Circuit
Fig 16. Gate Charge Waveform
Important Notice:
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of GTM.
GTM reserves the right to make changes to its products without notice.
GTM semiconductor products are not warranted to be suitable for use in life-support Applications, or systems.
GTM assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
Head Office And Factory:
Taiwan: No. 17-1 Tatung Rd. Fu Kou Hsin-Chu Industrial Park, Hsin-Chu, Taiwan, R. O. C.
TEL : 886-3-597-7061 FAX : 886-3-597-9220, 597-0785
China: (201203) No.255, Jang-Jiang Tsai-Lueng RD. , Pu-Dung-Hsin District, Shang-Hai City, China
TEL : 86-21-5895-7671 ~ 4 FAX : 86-21-38950165
GJ01N60
Page: 5/5

5 Page










PáginasTotal 5 Páginas
PDF Descargar[ Datasheet GJ01N60.PDF ]




Hoja de datos destacado

Número de piezaDescripciónFabricantes
GJ01N60N-CHANNEL ENHANCEMENT MODE POWER MOSFETGTM
GTM

Número de piezaDescripciónFabricantes
SLA6805M

High Voltage 3 phase Motor Driver IC.

Sanken
Sanken
SDC1742

12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters.

Analog Devices
Analog Devices


DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares,
permitiéndote verlos en linea o descargarlos en PDF.


DataSheet.es    |   2020   |  Privacy Policy  |  Contacto  |  Buscar