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PDF GI8550 Data sheet ( Hoja de datos )
| Número de pieza | GI8550 | |
| Descripción | PNP EPITAXIAL TRANSISTOR | |
| Fabricantes | GTM CORPORATION | |
| Logotipo |  |
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CORPORATION ISSUED DATE :2005/05/06
REVISED DATE :
GI8550
PNP EPITAXIAL TRANSISTOR
Description
The GI8550 is designed for use in 2W output amplifier of portable radios in class B push-pull operation.
Features
*High Collector current (IC: 1.5A)
*Complementary to GI8050
Package Dimensions
TO-251
REF.
A
B
C
D
E
F
Millimeter
Min. Max.
6.40 6.80
5.20 5.50
6.80 7.20
7.20 7.80
2.30 REF.
0.60 0.90
REF.
G
H
J
K
L
M
Millimeter
Min. Max.
0.50 0.70
2.20 2.40
0.45 0.55
0.45 0.60
0.90 1.50
5.40 5.80
Absolute Maximum Ratings (Ta = 25 ,unless otherwise specified)
Parameter
Symbol
Ratings
Collector to Base Voltage
VCBO
-40
Collector to Emitter Voltage
VCEO
-25
Emitter to Base Voltage
VEBO
-6
Collect Current
IC -1.5
Base Current
IB -0.5
Junction Temperature
Tj +150
Storage Temperature Range
TsTG
-55 ~ +150
Total Power Dissipation
PD 1.25
Unit
V
V
V
A
A
W
Electrical Characteristics(Ta = 25 ,unless otherwise specified)
Symbol
Min. Typ. Max.
Unit
Test Conditions
BVCBO
-40 -
-
V IC=-100uA
BVCEO
-25 -
-
V IC=-2mA
BVEBO
-6 -
-
V IE=-100uA
ICBO
-
- -100
nA VCB=-35V
IEBO
-
- -100
nA VBE=-6V
*VCE(sat)
- - -0.5 V lC=-800mA, IB=-80mA
*VBE(sat)
- - -1.2 V lC=-800mA, IB=-80mA
*VBE(on)
- - -1
V VCE=-1V, IC=-10mA
*hFE1
45 -
-
VCE=-1V, IC=-5mA
*hFE2
120 - 500
VCE=-1V, IC=-100mA
*hFE3
40 -
-
VCE=-1V, IC=-800mA
fT
100 -
-
MHz
VCE=-10V, IC=-50mA, f=100MHz
Cob
-9-
pF VCB=-10V, IE=0, f=1MHz
Classification Of hFE2
* Pulse Test: Pulse Width 380 s, Duty Cycle
Rank
C
D
E
Range
120 ~ 200
160 ~ 300
250 ~ 500
2%
GI8550
Page: 1/2
1 page | ||
| Páginas | Total 2 Páginas | |
| PDF Descargar | [ Datasheet GI8550.PDF ] | |
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