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PDF SB10100F Data sheet ( Hoja de datos )

Número de pieza SB10100F
Descripción (SB1020F - SB10150F) SCHOTTKY BARRIER RECTIFIER
Fabricantes Pan Jit International 
Logotipo Pan Jit International Logotipo



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DATA SHEET
SB1020F~SB10150F
ISOLATION SCHOTTKY BARRIER RECTIFIERS
VOLTAGE 20 to 150 Volts CURRENT 10 Amperes
FEATURES
• Plastic package has Underwriters Laboratory
Flammability Classification 94V-O.
Flame Retardant Epoxy Molding Compound.
• Exceeds environmental standards of MIL-S-19500/228
• Low power loss, high efficiency.
• Low forwrd voltge, high current capability
• High surge capacity.
• For use in low voltage,high frequency inverters
free wheeling , and polarlity protection applications.
• Pb free product are available : 99% Sn above can meet Rohs environment
substance directive request
MECHANICALDATA
Case: ITO-220AC Molded plastic
Terminals: Solder plated, solderable per MIL-STD-750, Method 2026
Polarity: As marked.
Standard packaging: Any
Weight: 0.08 ounces, 2.24grams.
ITO-220AC
.406(10.3)
.381(9.7)
.134(3.4)
.118(3.0)
.055(1.4)
.039(1.0)
.055(1.4)
.039(1.0)
.035(0.9)
.011(0.3)
.1
(2.55)
.1
(2.55)
Unit : inch (mm)
.189(4.8)
.165(4.2)
.130(3.3)
.114(2.9)
.114(2.9)
.098(2.5)
.032(.8)
MAX
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25°C ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%
PARAMETER
SYMBOL
SB10
20F
SB10
30F
SB10
40F
SB10
45F
SB10
50F
SB10
60F
SB10
80F
SB10
100F
SB10
150F
UNITS
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
VRRM 20 30 40 45 50 60 80 100 150 V
VRMS 14 21 28 31.5 35 42 56 70 105 V
VDC 20 30 40 45 50 60 80 100 150 V
Maximum Average Forward Current .375"
(9.5mm) lead length at Tc =100
IAV
10 A
Peak Forward Surge Current :8.3ms single half
sine-wave superimposed on rated load
(JEDEC method)
IFSM
Maximum Forward Voltage at 10A
Maximum DC Reverse Current TA=25
at Rated DC Blocking Voltage TA=100
VF
IR
Typical Thermal Resistance
Operating Junction and Storage Temperature
Range
RQJ A
TJ,TSTG
Note.
Both Bonding and Chip structure are available.
0.55
150
0.75
0.5
50
/W
0.85
A
0.92 V
mA
STAD-OCT.20.2004
PAGE . 1

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