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PDF RF5198 Data sheet ( Hoja de datos )
| Número de pieza | RF5198 | |
| Descripción | W-CDMA LINEAR POWER AMPLIFIER MODULE | |
| Fabricantes | RF Micro Devices | |
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RF5198
0 3V 1950MHZ W-CDMA LINEAR POWER
AMPLIFIER MODULE
RoHS Compliant & Pb-Free Product
Typical Applications
• 3V W-CDMA Band 1 Handsets
• 3V TD-SCDMA Handsets
• Multi-Mode W-CDMA 3G Handsets
• Spread-Spectrum Systems
Product Description
The RF5198 is a high-power, high-efficiency linear ampli-
fier module specifically designed for 3V handheld sys-
tems. The device is manufactured on an advanced third
generation GaAs HBT process, and was designed for use
as the final RF amplifier in 3V W-CDMA handheld digital
cellular equipment, spread-spectrum systems, and other
applications in the 1920MHz to 1980MHz band (Band 1).
The RF5198 has a digital control pin for low power appli-
cations to lower quiescent current. This PA also includes
a power detector circuit. The RF5198 is assembled in at
16-pin, 3mmx3mm, QFN package.
Pin 1 ID
3.00
A
1.45
3.00 1.45
0.15 C
2 PLCS
0.15 C
2 PLCS
B
0.203 REF
00..4200TYP
0.10 M C A B
0.08 C
0.925
0.775
0.102 REF
Shaded areas represent pin 1. Dimensions in mm.
C
Pin 1 ID
00..2188TYP
0.05
0.50 TYP
0.08 C
Optimum Technology Matching® Applied
Si BJT
9GaAs HBT
GaAs MESFET
Si Bi-CMOS
SiGe HBT
Si CMOS
InGaP/HBT
GaN HEMT
SiGe Bi-CMOS
16 15 14 13
RF IN 1
GND 2
Interstage MN
Q1
IMN
Q2
12 VCC2
11 VCC2
VMODE 3
VREG 4
5
Bias
Integrated
Power
Detector
OMN
10 VCC2
9 RF OUT
67
8
Functional Block Diagram
Rev A5 060310
Package Style: QFN, 16-Pin, 3x3
Features
• Input/Output Internally Matched@50Ω
• 27.5dBm Linear Output Power
• 42% Peak Linear Efficiency
• -41dBc ACLR @ ±5MHz
• Integrated Power Detector
• HSDPA Capable
Ordering Information
RF5198
3V 1950MHz W-CDMA Linear Power Amplifier Mod-
ule
RF5198PCBA-41XFully Assembled Evaluation Board
RF Micro Devices, Inc.
7628 Thorndike Road
Greensboro, NC 27409, USA
Tel (336) 664 1233
Fax (336) 664 0454
http://www.rfmd.com
2-1
1 page  
RF5198
Application Schematic
VCC BIAS may be connected
to VCC; however, VCC must be
maintained above 1.5 V.
VCC BIAS
The 8.2nH inductor may be
required for isolation of VCC1
and VCC2 depending on layout.
8.2 nH
VCC
10 μF
1 nF
16 15 14 13
RF IN
VMODE
VREG
1 nF
1 nF
1 12
Interstage MN
Q1
IMN
2
Q2
11
Bias
3
10
OMN
Integrated
4 Power
Detector
9
5 67 8
RDET
5.1 kΩ
1 nF
Place the 1 nF capacitor next
to RF5198 with minimal trace
length to the PA.
RF OUT/
ZLOAD
Matching
Component
(See Table Below)
VDET
NOTE:
Additional averaging or lowpass filtering is required on this
pin to reduce the voltage ripple due to the W-CDMA
modulation. A lowpass cutoff frequency is selected through
trade-off between acceptable amplitude ripple and rise/fall
time. The 5.1 kΩ resistor to ground provides a DC return
for the detector temperature compensation circuitry.
Circuit Optimization for Various Output Power Requirements
Output Power (dBm) Matching Component
Sample Part Number
28
12 nH
LQG15HN12NJ02D (Murata)
27.5 N/A
26.5
0.5 pF
GRM1555C1HR50BZ01E (Murata)
26
1.0 pF
GRM1555C1H1R0BZ01E (Murata)
25
1.5 pF
GRM1555C1H1R5BZ01E (Murata)
Typical Efficiency (%)
41
42
42
42
41
Rev A5 060310
2-5
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet RF5198.PDF ] | |
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