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PDF RF5144 Data sheet ( Hoja de datos )

Número de pieza RF5144
Descripción TRI-MODE POWER AMPLIFIER MODULE
Fabricantes RF Micro Devices 
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RF5144
0 DUAL-BAND CDMA 800MHz/1900MHz
TRI-MODE POWER AMPLIFIER MODULE
RoHS Compliant & Pb-Free Product
Typical Applications
• 3V CDMA/AMPS Cellular Handset
• 3V CDMA US-PCS Handset
• 3V CDMA2000/1XRTT Cellular Handset • 3V CDMA2000/1XRTT US-PCS Handset
Product Description
The RF5144 is a high-power, high-efficiency linear ampli-
fier module specifically designed for 3V handheld sys-
tems. The device is manufactured on an advanced third
generation GaAs HBT process, and was designed for use
as the final RF amplifier in 3V IS-95/CDMA20001X/
AMPS handheld digital cellular equipment, spread-spec-
trum systems, and other applications in the 824MHz to
849MHz band and 1850MHz to 1910MHz band. The
RF5144 has a digital control line for low power applica-
tions to lower quiescent current. The RF5144 is assem-
bled in a 24-pin, 4mmx4mm, QFN package.
Optimum Technology Matching® Applied
Si BJT
9GaAs HBT
GaAs MESFET
Si Bi-CMOS
SiGe HBT
Si CMOS
InGaP/HBT
GaN HEMT
SiGe Bi-CMOS
24 23 22 21 20 19
VREG - PCS 1
RF IN - PCS 2
Bias
PCS
18 NC
17 NC
VREG - CELL 3
VMODE - CELL 4
Bias
Cell
16 RF OUT - PCS
15 NC
RF IN - CELL 5
14 RF OUT - CELL
VCC1 - CELL 6
13 NC
7 8 9 10 11 12
Functional Block Diagram
0.10 C
4.0
-A-
-B-
1.00
0.80
4.0
0.10 C B
2 PL
0.10 C A
2 PL
0.50 TYP
0.10 C A B
2.60
2.40
2
PL
0.2 C
Shaded area indicates pin 1.
Dimensions in mm.
-C-
0.55
0.35TYP
SEATING
PLANE
Scale: None
0.10 C
0.203
TYP
0.08 C
0.05
0.00
TYP
0.30
0.18
TYP
0.10 M C A B
TYP00..0083
0.50TYP
0.30
Package Style: QFN, 24-Pin, 4x4
Features
• Input/Output Internally Matched@50Ω
• 28dBm Output Power
• 41% Peak Linear Efficiency for Cell Band
• -51dBc ACPR @ 885kHz for Cell Band
• -50dBc [email protected] for PCS Band
• 40% Peak Linear Efficiency for PCS Band
Ordering Information
RF5144
Dual-Band CDMA 800MHz/1900MHz Tri-Mode
Power Amplifier Module
RF5144PCBA-410 Fully Assembled Evaluation Board
RF Micro Devices, Inc.
7628 Thorndike Road
Greensboro, NC 27409, USA
Tel (336) 664 1233
Fax (336) 664 0454
http://www.rfmd.com
Rev A0 060214
2-689

1 page




RF5144 pdf
RF5144
VMODE_PCS
VREG_PCS
RF IN - PCS
VREG_Cell
Evaluation Board Schematic - CDMA
VCC BIAS
VCC1_PCS
C2 C13
4.7 μF 2200 pF
50 Ω μstrip
C7 C14
4.7 μF 2200 pF
C4
4.7 μF
C6
4.7 μF
C
4.7 μF
C16
2200 pF
C6
4.7 μF
C10
2200 pF
24 23 22 21 20 19
1 Bias
PCS
2
18
17
3
Bias
4 Cell
16
15
5 14
6 13
7 8 9 10 11 12
C9
1000 pF
VCC2_PCS
C1
22 μF
50 Ω μstrip
RF OUT_PCS
50 Ω μstrip
RF OUT_Cell
VMODE_Cell
RF IN_Cell
50 Ω μstrip
C11
2200 pF
C8
4.7 μF
VCC1_Cell
L2*
VCC2_Cell
C12 C5
2200 pF 22 μF
*The current rating for component L2 needs to be 1A. On the evaluation board, the parasitic
inductance of a 0603 0 Ω resistor (Panasonic part #ERJ-3GEY0R00) is used to realize the required
inductance. An inductor with value between 1 nH and 1.5 nH can also be used for L2. Different
inductance will give slight tradeoff between ACPR and efficiency. The 0 Ω resistor is chosen on the
evaluation board for the reason of low BOM cost.
Rev A0 060214
2-693

5 Page










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