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PDF IRHY58130CM Data sheet ( Hoja de datos )
| Número de pieza | IRHY58130CM | |
| Descripción | (IRHY5x130CM) RADIATION HARDENED POWER MOSFET | |
| Fabricantes | International Rectifier | |
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PD - 93826D
RADIATION HARDENED
POWER MOSFET
THRU-HOLE (TO-257AA)
Product Summary
Part Number Radiation Level RDS(on)
IRHY57130CM 100K Rads (Si) 0.07Ω
IRHY53130CM 300K Rads (Si) 0.07Ω
IRHY54130CM 500K Rads (Si) 0.07Ω
IRHY58130CM1000K Rads (Si) 0.085Ω
IRHY57130CM
JANSR2N7484T3
100V, N-CHANNEL
REF: MIL-PRF-19500/702
5 TECHNOLOGY
ID
18A*
18A*
18A*
18A*
QPL Part Number
JANSR2N7484T3
JANSF2N7484T3
JANSG2N7484T3
JANSH2N7484T3
TO-257AA
International Rectifier’s R5TM technology provides
high performance power MOSFETs for space
applications.These devices have been characterized
for Single Event Effects (SEE) with useful performance
up to an LET of 80 (MeV/(mg/cm2)). The combination
of low RDS(on) and low gate charge reduces the
power losses in switching applications such as DC
to DC converters and motor control. These devices
retain all of the well established advantages of
MOSFETs such as voltage control, fast switching,
ease of paralleling and temperature stability of
electrical parameters.
Features:
n Single Event Effect (SEE) Hardened
n Ultra Low RDS(on)
n Low Total Gate Charge
n Simple Drive Requirements
n Ease of Paralleling
n Hermetically Sealed
n Ceramic Eyelets
n Light Weight
Absolute Maximum Ratings
Pre-Irradiation
Parameter
Units
ID @ VGS = 12V, TC = 25°C
ID @ VGS = 12V, TC = 100°C
IDM
PD @ TC = 25°C
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current À
Max. Power Dissipation
Linear Derating Factor
18*
14 A
72
75 W
0.6 W/°C
VGS
Gate-to-Source Voltage
±20 V
EAS Single Pulse Avalanche Energy Á
87
mJ
IAR Avalanche Current À
18 A
EAR
Repetitive Avalanche Energy À
7.5 mJ
dv/dt
Peak Diode Recovery dv/dt Â
1.4 V/ns
TJ
TSTG
Operating Junction
Storage Temperature Range
Lead Temperature
-55 to 150
300 (0.063in./1.6mm from case for 10sec)
oC
Weight
4.3 (Typical)
g
* Current is limited by package
For footnotes refer to the last page
www.irf.com
1
4/26/06
1 page  
Pre-Irradiation
IRHY57130CM, JANSR2N7484T3
2000
1600
VGS = 0V, f = 1MHz
Ciss = Cgs + Cgd , Cds SHORTED
Crss = Cgd
Coss = Cds + Cgd
1200
Ciss
800 Coss
400
0
1
Crss
10 100
VDS , Drain-to-Source Voltage (V)
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
20 ID = 21268A
15
VDS = 80V
VDS = 50V
VDS = 20V
10
5
FOR TEST CIRCUIT
SEE FIGURE 13
0
0 10 20 30 40 50
QG , Total Gate Charge (nC)
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
100
10 TJ = 150° C
1
TJ = 25° C
0.1
0.4
VGS = 0 V
0.6 0.8 1.0
VSD ,Source-to-Drain Voltage (V)
1.2
Fig 7. Typical Source-Drain Diode
Forward Voltage
www.irf.com
1000
100
OPERATION IN THIS AREA
LIMITED BY R DS(on)
10
100µs
1ms
1
Tc = 25°C
Tj = 150°C
Single Pulse
0.1
1 10
10ms
100
VDS , Drain-toSource Voltage (V)
1000
Fig 8. Maximum Safe Operating Area
5
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| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet IRHY58130CM.PDF ] | |
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