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PDF IRHLUB7970Z4 Data sheet ( Hoja de datos )
| Número de pieza | IRHLUB7970Z4 | |
| Descripción | (IRHLUB79x0Z4) POWER MOSFET | |
| Fabricantes | International Rectifier | |
| Logotipo |  |
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PD - 94764C
RADIATION HARDENED
LOGIC LEVEL POWER MOSFET
SURFACE MOUNT (UB)
Product Summary
Part Number Radiation Level RDS(on) ID
IRHLUB7970Z4 100K Rads (Si) 1.2Ω -0.53A
IRHLUB7930Z4 300K Rads (Si) 1.2Ω -0.53A
IRHLUB7970Z4
60V, P-CHANNEL
TECHNOLOGY
International Rectifier’s R7TM Logic Level Power
Mosfets provide simple solution to interfacing CMOS
and TTL control circuits to power devices in space
and other radiation environments. The threshold
voltage remains within acceptable operating limits
over the full operating temperature and post radiation.
This is achieved while maintaining single event gate
rupture and single event burnout immunity.
These devices are used in applications such as
current boost low signal source in PWM, voltage
comparator and operational amplifiers.
UB
Features:
n 5V CMOS and TTL Compatible
n Fast Switching
n Single Event Effect (SEE) Hardened
n Low Total Gate Charge
n Simple Drive Requirements
n Ease of Paralleling
n Hermetically Sealed
n Complimentary N-Channel Available -
IRHLUB770Z4
n Available on Tape & Reel
Absolute Maximum Ratings
Parameter
ID @ VGS = -4.5V, TC = 25°C Continuous Drain Current
ID @ VGS = -4.5V, TC = 100°C Continuous Drain Current
IDM Pulsed Drain Current À
PD @ TC = 25°C
Max. Power Dissipation
Linear Derating Factor
VGS
EAS
IAR
EAR
dv/dt
TJ
TSTG
Gate-to-Source Voltage
Single Pulse Avalanche Energy Á
Avalanche Current À
Repetitive Avalanche Energy À
Peak Diode Recovery dv/dt Â
Operating Junction
Storage Temperature Range
Pckg. Mounting Surface Temp.
Weight
For footnotes refer to the last page
www.irf.com
-0.53
-0.33
-2.12
0.6
0.0045
±10
3.5
-0.53
0.06
-4.4
-55 to 150
300 (for 5s)
43 (Typical )
Pre-Irradiation
Units
A
W
W/°C
V
mJ
A
mJ
V/ns
oC
mg
1
09/03/04
1 page  
Pre-Irradiation
IRHLUB7970Z4
250
200
VCCCGirossssSss
=
=
=
=
0V,
CCCggdsds
+
+
f = 1MHz
Cgd , Cds
Cgd
SHORTED
Ciss
150
100
Coss
50
Crss
0
1 10 100
-VDS , Drain-to-Source Voltage (V)
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
12 ID = -0.53A
10
VVDDSS
=
=
-48V
-30V
VDS =-12V
8
6
4
2
FOR TEST CIRCUIT
0 SEE FIGURE 13
0123456
QG , Total Gate Charge (nC)
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
10
TJ = 150°C
1 TJ = 25°C
0.1
0.01
0
VGS = 0V
1234
-VSD , Source-to-Drain Voltage (V)
5
Fig 7. Typical Source-Drain Diode
Forward Voltage
www.irf.com
10
OPERATION IN THIS AREA LIMITED
BY RDS(on)
1
100µ s
0.1 1ms
0.01
Tc = 25°C
Tj = 150°C
Single Pulse
1 10
10ms
100
-VDS , Drain-to-Source Voltage (V)
1000
Fig 8. Maximum Safe Operating Area
5
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet IRHLUB7970Z4.PDF ] | |
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