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PDF IRHLUB770Z4 Data sheet ( Hoja de datos )

Número de pieza IRHLUB770Z4
Descripción (IRHLUB7x0Z4) POWER MOSFET
Fabricantes International Rectifier 
Logotipo International Rectifier Logotipo



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PD - 95813B
RADIATION HARDENED
LOGIC LEVEL POWER MOSFET
SURFACE MOUNT (UB)
Product Summary
Part Number Radiation Level
IRHLUB770Z4 100K Rads (Si)
IRHLUB730Z4 300K Rads (Si)
RDS(on)
0.55
0.55
ID
0.8A
0.8A
IRHLUB770Z4
60V, N-CHANNEL
TECHNOLOGY
UB
International Rectifier’s R7TM Logic Level Power
MOSFETs provide simple solution to interfacing
CMOS and TTL control circuits to power devices in
space and other radiation environments. The
threshold voltage remains within acceptable operating
limits over the full operating temperature and post
radiation. This is achieved while maintaining single
event gate rupture and single event burnout immunity.
These devices are used in applications such as
current boost low signal source in PWM, voltage
comparator and operational amplifiers.
Features:
n 5V CMOS and TTL Compatible
n Fast Switching
n Single Event Effect (SEE) Hardened
n Low Total Gate Charge
n Simple Drive Requirements
n Ease of Paralleling
n Hermetically Sealed
n Light Weight
n Complimentary P-Channel Available -
IRHLUB7970Z4
n Available on Tape & Reel
Absolute Maximum Ratings
Parameter
ID @ VGS = 4.5V, TC = 25°C Continuous Drain Current
ID @ VGS = 4.5V, TC = 100°C Continuous Drain Current
IDM Pulsed Drain Current À
PD @ TC = 25°C
Max. Power Dissipation
Linear Derating Factor
VGS
EAS
IAR
EAR
dv/dt
Gate-to-Source Voltage
Single Pulse Avalanche Energy Á
Avalanche Current À
Repetitive Avalanche Energy À
Peak Diode Recovery dv/dt Â
TJ
TSTG
Operating Junction
Storage Temperature Range
Lead Temperature
Weight
0.8
0.5
3.2
0.6
0.0045
±10
2.0
0.8
0.06
4.0
-55 to 150
300 (for 5s)
43 (Typical)
Pre-Irradiation
Units
A
W
W/°C
V
mJ
A
mJ
V/ns
oC
mg
For footnotes refer to the last page
www.irf.com
1
09/09/04

1 page




IRHLUB770Z4 pdf
Pre-Irradiation
IRHLUB770Z4
250 VGS = 0V, f = 1MHz
Ciss = Cgs + Cgd , Cds SHORTED
Crss = Cgd
200 Coss = Cds + Cgd
Ciss
150
Coss
100
50
Crss
0
1 10 100
VDS , Drain-to-Source Voltage (V)
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
12
ID = 0.8A
10
VDS = 48V
VDS = 30V
VDS = 12V
8
6
4
2
FOR TEST CIRCUIT
SEE FIGURE 13
0
012456
QG , Total Gate Charge (nC)
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
10
TJ = 150°C
1
TJ = 25°C
0.1
0.4
VGS = 0V
0.6 0.8 1.0 1.2 1.4
VSD , Source-to-Drain Voltage (V)
1.6
Fig 7. Typical Source-Drain Diode
Forward Voltage
www.irf.com
10
OPERATION IN THIS AREA LIMITED
BY RDS(on)
1
100µs
1ms
0.1
0.01
Tc = 25°C
Tj = 150°C
Single Pulse
1 10
10ms
100
VDS , Drain-toSource Voltage (V)
1000
Fig 8. Maximum Safe Operating Area
5

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