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PDF IRG4BC30FD-S Data sheet ( Hoja de datos )
| Número de pieza | IRG4BC30FD-S | |
| Descripción | INSULATED GATE BIPOLAR TRANSISTOR | |
| Fabricantes | International Rectifier | |
| Logotipo |  |
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INSULATED GATE BIPOLAR TRANSISTOR WITH
HYPERFAST DIODE
Features
Fast: optimized for medium operating frequencies
(1-5 kHz in hard switching, >20kHz in resonant mode).
Generation 4 IGBT design provides tighter
parameter distribution and higher efficiency than
Generation 3.
IGBT co-packaged with HEXFREDTM ultrafast, ultra-soft
recovery anti-parallel diodes for use in bridge configurations.
PD - 96929
IRG4BC30FD-S
Fast CoPack IGBT
C
VCES = 600V
G VCE(on) typ. = 1.59V
E
n-channel
@VGE = 15V, IC = 17A
Benefits
Generation 4 IGBT's offer highest efficiency available.
IGBT's optimized for specific application conditions.
HEXFRED diodes optimized for performance with IGBT's.
Minimized recovery characteristics require less/no
snubbing.
Designed to be a "drop-in" replacement for equivalent
industry-standard Generation 3 IR IGBT's.
D2Pak
Absolute Maximum Ratings
Parameter
VCES
Collector-to-Emitter Voltage
IC @ TC = 25°C Continuous Collector Current
IC @ TC = 100°C
ICM
ILM
Continuous Collector Current
cPulse Collector Current (Ref.Fig.C.T.5)
dClamped Inductive Load current
IF @ TC = 100°C Diode Continuous Forward Current
IFM Diode Maximum Forward Current
VGE Gate-to-Emitter Voltage
PD @ TC = 25°C Maximum Power Dissipation
PD @ TC = 100°C Maximum Power Dissipation
TJ Operating Junction and
TSTG
Storage Temperature Range
Thermal / Mechanical Characteristics
Parameter
RθJC
RθCS
RθJA
Wt
Junction-to-Case- IGBT
Case-to-Sink, flat, greased surface
gJunction-to-Ambient (PCB Mounted,steady state)
Weight
Max.
600
31
17
120
120
12
120
±20
100
42
-55 to +150
Min.
–––
–––
–––
–––
Typ.
–––
0.50
–––
2.0 (0.07)
Max.
1.2
–––
40
–––
Units
V
A
V
W
°C
Units
°C/W
g (oz.)
www.irf.com
1
12/02/04
1 page  
IRG4BC30FD-S
www.irf.com
5
5 Page 
IRG4BC30FD-S
D2Pak Tape & Reel Information
Dimensions are shown in millimeters (inches)
TRR
1.60 (.063)
1.50 (.059)
4.10 (.161)
3.90 (.153)
FEED DIRECTION 1.85 (.073)
1.65 (.065)
TRL
10.90 (.429)
10.70 (.421)
1.60 (.063)
1.50 (.059)
11.60 (.457)
11.40 (.449)
15.42 (.609)
15.22 (.601)
1.75 (.069)
1.25 (.049)
16.10 (.634)
15.90 (.626)
0.368 (.0145)
0.342 (.0135)
24.30 (.957)
23.90 (.941)
4.72 (.136)
4.52 (.178)
FEED DIRECTION
13.50 (.532)
12.80 (.504)
27.40 (1.079)
23.90 (.941)
4
330.00
(14.173)
MAX.
60.00 (2.362)
MIN.
NOTES :
1. COMFORMS TO EIA-418.
2. CONTROLLING DIMENSION: MILLIMETER.
3. DIMENSION MEASURED @ HUB.
4. INCLUDES FLANGE DISTORTION @ OUTER EDGE.
26.40 (1.039)
24.40 (.961)
3
30.40 (1.197)
MAX.
4
Notes:
Repetitive rating: VGE=20V; pulse width limited by maximum junction temperature (figure 20).
VCC=80%(VCES), VGE=20V, L=10µH, RG = 23Ω (figure 19).
Pulse width ≤ 80µs; duty factor ≤ 0.1%.
Pulse width 5.0µs, single shot.
When mounted on 1" square PCB (FR-4 or G-10 Material).
Data and specifications subject to change without notice.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information. 12/04
www.irf.com
11
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| Páginas | Total 11 Páginas | |
| PDF Descargar | [ Datasheet IRG4BC30FD-S.PDF ] | |
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