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PDF 20N40CL Data sheet ( Hoja de datos )
| Número de pieza | 20N40CL | |
| Descripción | MGP20N40CL | |
| Fabricantes | Motorola Semiconductors | |
| Logotipo |  |
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MOTOROLA
www.DSatEaSMhIeCetO4UN.cDoUmCTOR TECHNICAL DATA
Advanced Information
SMARTDISCRETES
™
Internally Clamped, N-Channel
IGBT
This Logic Level Insulated Gate Bipolar Transistor (IGBT)
features Gate–Emitter ESD protection, Gate–Collector overvoltage
protection from SMARTDISCRETES™ monolithic circuitry for
usage as an Ignition Coil Driver.
• Temperature Compensated Gate–Drain Clamp Limits Stress
Applied to Load
• Integrated ESD Diode Protection
• Low Threshold Voltage to Interface Power Loads to Logic or
Microprocessors
• Low Saturation Voltage
• High Pulsed Current Capability
Order this document
by MGP20N40CL/D
MGP20N40CL
20 AMPERES
VOLTAGE CLAMPED
N–CHANNEL IGBT
Vce(on) = 1.8 VOLTS
400 VOLTS (CLAMPED)
®
C
G
G
Rge
C
E
CASE 221A–06, Style 9
TO–220AB
E
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Rating
Symbol
Value
Collector–Emitter Voltage
Collector–Gate Voltage
Gate–Emitter Voltage
Collector Current — Continuous @ TC = 25°C
tReversed Collector Current – pulse width 100 m s
Total Power Dissipation @ TC = 25°C (TO–220)
Electrostatic Voltage — Gate–Emitter
VCES
VCGR
VGE
IC
ICR
PD
ESD
CLAMPED
CLAMPED
CLAMPED
20
12
150
3.5
Operating and Storage Temperature Range
THERMAL CHARACTERISTICS
Thermal Resistance — Junction to Case – (TO–220)
— Junction to Ambient
Maximum Lead Temperature for Soldering Purposes, 1/8″ from case for 5 seconds
Mounting Torque, 6–32 or M3 screw
TJ, Tstg
– 55 to 175
Rq JC
Rq JA
1.0
62.5
TL 275
10 lbfin (1.13 Nm)
UNCLAMPED INDUCTIVE SWITCHING CHARACTERISTICS
Single Pulse Collector–Emitter Avalanche Energy
@ Starting TJ = 25°C
@ Starting TJ = 150°C
EAS
550
150
SMARTDISCRETES and TMOS are trademarks of Motorola, Inc.
This document contains information on a new product. Specifications and information herein are subject to change without notice.
Unit
Vdc
Vdc
Vdc
Adc
Apk
Watts
kV
°C
°C/W
°C
mJ
REV 1
© MMoototororloa,laIncT.M19O97S Power MOSFET Transistor Device Data
1
1 page  
1.0
D = 0.5
0.2
0.1
0.1 0.05
0.02
0.01
0.01
1.0E – 05
SINGLE PULSE
1.0E – 04
MGP20N40CL
P(pk)
t1
t2
DUTY CYCLE, D = t1/t2
RθJC(t) = r(t) RθJC
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t1
TJ(pk) – TC = P(pk) RθJC(t)
1.0E – 03
1.0E – 02
t, TIME (s)
Figure 12. Thermal Response
1.0E – 01
1.0E+00
1.0E+01
PACKAGE DIMENSIONS
B
Q
H
Z
4
1 23
L
V
G
N
F
T
–T–
SEATING
PLANE
C
S
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. DIMENSION Z DEFINES A ZONE WHERE ALL
BODY AND LEAD IRREGULARITIES ARE
ALLOWED.
A
U
K
R
J
D
STYLE 9:
PIN 1.
2.
3.
4.
GATE
COLLECTOR
EMITTER
COLLECTOR
INCHES
DIM MIN MAX
A 0.570 0.620
B 0.380 0.405
C 0.160 0.190
D 0.025 0.035
F 0.142 0.147
G 0.095 0.105
H 0.110 0.155
J 0.018 0.025
K 0.500 0.562
L 0.045 0.060
N 0.190 0.210
Q 0.100 0.120
R 0.080 0.110
S 0.045 0.055
T 0.235 0.255
U 0.000 0.050
V 0.045 –––
Z ––– 0.080
MILLIMETERS
MIN MAX
14.48 15.75
9.66 10.28
4.07 4.82
0.64 0.88
3.61 3.73
2.42 2.66
2.80 3.93
0.46 0.64
12.70 14.27
1.15 1.52
4.83 5.33
2.54 3.04
2.04 2.79
1.15 1.39
5.97 6.47
0.00 1.27
1.15 –––
––– 2.04
CASE 221A–06
(TO–220AB)
ISSUE Y
Motorola TMOS Power MOSFET Transistor Device Data
5
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet 20N40CL.PDF ] | |
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