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PDF RF3140 Data sheet ( Hoja de datos )

Número de pieza RF3140
Descripción QUAD-BAND GSM850/GSM900/DCS/PCS POWER AMP MODULE
Fabricantes RF Micro Devices 
Logotipo RF Micro Devices Logotipo



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Pb-Free Product
Typical Applications
• 3V Quad-Band GSM Handsets
• Commercial and Consumer Systems
• Portable Battery-Powered Equipment
RF3140
QUAD-BAND GSM850/GSM900/DCS/PCS
POWER AMP MODULE
• GSM850/EGSM900/DCS/PCS Products
• GPRS Class 12 Compatible
• Power StarTM Module
Product Description
The RF3140 is a high-power, high-efficiency power ampli-
fier module with integrated power control. The device is
self-contained with 50Ω input and output terminals. The
power control function is also incorporated, eliminating
the need for directional couplers, detector diodes, power
control ASICs and other power control circuitry; this
allows the module to be driven directly from the DAC out-
put. The device is designed for use as the final RF ampli-
fier in GSM850, EGSM900, DCS and PCS handheld
digital cellular equipment and other applications in the
824MHz to 849MHz, 880MHz to 915MHz, 1710MHz to
1785MHz and 1850MHz to 1910MHz bands. On-board
power control provides over 50dB of control range with an
analog voltage input; and, power down with a logic “low”
for standby operation.
Optimum Technology Matching® Applied
Si BJT
9GaAs HBT
GaAs MESFET
Si Bi-CMOS
9SiGe HBT
Si CMOS
InGaP/HBT
GaN HEMT
SiGe Bi-CMOS
DCS/PCS IN 1
BAND SELECT 2
TX ENABLE 3
VBATT 4
VREG 5
VRAMP 6
GSM850/GSM900 IN 7
12
8
11 DCS/PCS OUT
10 VCC OUT
9 GSM850/GSM900 OUT
Functional Block Diagram
9.600 TYP
8.800 TYP
8.200 TYP
7.400 TYP
6.800 TYP
6.000 TYP
5.400 TYP
4.600 TYP
4.000 TYP
3.200 TYP
2.600 TYP
1.800 TYP
1.200 TYP
0.400 TYP
0.000
Pin 1
8.747
5.925
4.075
1.245
0.306
Pin 1
1.70
1.45
10.00
± 0.10
10.00 ± 0.10
0.450
± 0.075
Package Style: Module (10mmx10mm)
Features
• Complete Power Control Solution
• Single 3.0V to 5.5V Supply Voltage
• +35dBm GSM Output Power at 3.5V
• +33dBm DCS/PCS Output Power at 3.5V
• 60% GSM and 55% DCS/PCS ηEFF
• 10mmx10mm Package Size
Ordering Information
RF3140
Quad-Band GSM850/GSM900/DCS/PCS Power
Amp Module
RF3140
Power Amp Module 5-Piece Sample Pack
RF3140PCBA-41XFully Assembled Evaluation Board
RF Micro Devices, Inc.
7628 Thorndike Road
Greensboro, NC 27409, USA
Tel (336) 664 1233
Fax (336) 664 0454
http://www.rfmd.com
Rev A9 060217
2-491

1 page




RF3140 pdf
RF3140
Parameter
Specification
Min.
Typ.
Max.
Overall (DCS Mode)
Operating Frequency Range
Maximum Output Power
+32
+29.5
Total Efficiency
Input Power Range
48
0
Output Noise Power
Forward Isolation 1
Forward Isolation 2
Second Harmonic
Third Harmonic
All Other
Non-Harmonic Spurious
Input Impedance
Input VSWR
Output Load VSWR Stability
Output Load VSWR Ruggedness
8:1
10:1
Output Load Impedance
Power Control VRAMP
Power Control Range
Note: VRAMP MAX=3/8*VBATT+0.18<1.5V
1710 to 1785
+33
+31.0
55
+3
-85
-40
-20
-15
-30
50
-
50
50
+5
-80
-30
-10
-7
-15
-36
2.5:1
Unit
MHz
dBm
dBm
%
dBm
dBm
dBm
dBm
dBm
dBm
dBm
Ω
Ω
dB
Condition
Temp=25°C, VBATT=3.5V,
VRAMP=VRAMP MAX, PIN =3dBm,
VREG=2.8V, Freq=1710MHz to 1785MHz,
25% Duty Cycle, pulse width=1154μs
Temp=25°C, VBATT=3.5V,
VRAMP = VRAMP MAX
Temp=+85°C, VBATT=3.0V,
VRAMP=VRAMP MAX
At POUT MAX, VBATT=3.5V
Maximum output power guaranteed at mini-
mum drive level
RBW=100kHz, 1805MHz to 1880MHz,
POUT > 0dBm, VBATT=3.5V
TXEnable=Low, 0V, PIN=+5dBm
TXEnable=High, VRAMP=0.2V, PIN=0dBm
to +5dBm
VRAMP=0.2V to VRAMP MAX
VRAMP=0.2V to VRAMP MAX
VRAMP=0.2V to VRAMP MAX
VRAMP=0.2V to VRAMP MAX
Spurious<-36dBm, RBW=3MHz
Set VRAMP where VRAMP<34.2dBm into
50Ω load
Load impedance presented at RF OUT pin
VRAMP=0.2V to VRAMP MAX, PIN=+5dBm
Rev A9 060217
2-495

5 Page





RF3140 arduino
RF3140
The switching transients due to low battery conditions are regulated by incorporating the following relationship limiting
the maximum VRAMP voltage (Equation 4). Although no compensation is required for typical battery conditions, the bat-
tery compensation required for extreme conditions is covered by the relationship in Equation 4. This should be added to
the terminal software.
VRAMP
3--
8
VCC
+
0.18
(Eq. 4)
Due to reactive output matches, there are output power variations across frequency. There are a number of components
that can make the effects greater or less.
The components following the power amplifier often have insertion loss variation with respect to frequency. Usually, there
is some length of microstrip that follows the power amplifier. There is also a frequency response found in directional cou-
plers due to variation in the coupling factor over frequency, as well as the sensitivity of the detector diode. Since the
RF3140 does not use a directional coupler with a diode detector, these variations do not occur.
Input impedance variation is found in most GSM power amplifiers. This is due to a device phenomena where CBE and
CCB (CGS and CSG for a FET) vary over the bias voltage. The same principle used to make varactors is present in the
power amplifiers. The junction capacitance is a function of the bias across the junction. This produces input impedance
variations as the Vapc voltage is swept. Although this could present a problem with frequency pulling the transmit VCO
off frequency, most synthesizer designers use very wide loop bandwidths to quickly compensate for frequency variations
due to the load variations presented to the VCO.
The RF3140 presents a very constant load to the VCO. This is because all stages of the RF3140 are run at constant
bias. As a result, there is constant reactance at the base emitter and base collector junction of the input stage to the
power amplifier.
Noise power in PA's where output power is controlled by changing the bias voltage is often a problem when backing off of
output power. The reason is that the gain is changed in all stages and according to the noise formula (Equation 5),
FTOT
=
F1
+
F-----2----–-----1-
G1
+
--F----3-----–----1----
G1 G2
(Eq. 5)
the noise figure depends on noise factor and gain in all stages. Because the bias point of the RF3140 is kept constant
the gain in the first stage is always high and the overall noise power is not increased when decreasing output power.
Power control loop stability often presents many challenges to transmitter design. Designing a proper power control loop
involves trade-offs affecting stability, transient spectrum and burst timing.
In conventional architectures the PA gain (dB/ V) varies across different power levels, and as a result the loop bandwidth
also varies. With some power amplifiers it is possible for the PA gain (control slope) to change from 100dB/V to as high
as 1000dB/V. The challenge in this scenario is keeping the loop bandwidth wide enough to meet the burst mask at low
slope regions which often causes instability at high slope regions.
The RF3140 loop bandwidth is determined by internal bandwidth and the RF output load and does not change with
respect to power levels. This makes it easier to maintain loop stability with a high bandwidth loop since the bias voltage
and collector voltage do not vary.
An often overlooked problem in PA control loops is that a delay not only decreases loop stability it also affects the burst
timing when, for instance the input power from the VCO decreases (or increases) with respect to temperature or supply
voltage. The burst timing then appears to shift to the right especially at low power levels. The RF3140 is insensitive to a
change in input power and the burst timing is constant and requires no software compensation.
Rev A9 060217
2-501

11 Page







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