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PDF IRGIB7B60KDPBF Data sheet ( Hoja de datos )
| Número de pieza | IRGIB7B60KDPBF | |
| Descripción | INSULATED GATE BIPOLAR TRANSISTOR | |
| Fabricantes | International Rectifier | |
| Logotipo |  |
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PD - 95195
IRGIB7B60KDPbF
INSULATED GATE BIPOLAR TRANSISTOR WITH
ULTRAFAST SOFT RECOVERY DIODE
C
Features
• Low VCE (on) Non Punch Through IGBT Technology.
• 10µs Short Circuit Capability.
• Square RBSOA.
• Positive VCE (on) Temperature Coefficient.
• Maximum Junction Temperature rated at 175°C.
• Lead-Free
G
E
n-channel
VCES = 600V
IC = 8.0A, TC=100°C
tsc > 10µs, TJ=150°C
VCE(on) typ. = 1.8V
Benefits
• Benchmark Efficiency for Motor Control.
• Rugged Transient Performance.
• Low EMI.
• Excellent Current Sharing in Parallel Operation.
TO-220AB
FullPak
Absolute Maximum Ratings
Parameter
Max.
Units
VCES
Collector-to-Emitter Voltage
IC @ TC = 25°C Continuous Collector Current
IC @ TC = 100°C Continuous Collector Current
ICM Pulse Collector Current (Ref.Fig.C.T.5)
ILM Clamped Inductive Load current Q
IF @ TC = 25°C Diode Continuous Forward Current
IF @ TC = 100°C Diode Continuous Forward Current
IFM Diode Maximum Forward Current
VISOL
RMS Isolation Voltage, Terminal to Case, t=1 min.
VGE Gate-to-Emitter Voltage
PD @ TC = 25°C Maximum Power Dissipation
PD @ TC = 100°C Maximum Power Dissipation
TJ Operating Junction and
TSTG
Storage Temperature Range
Soldering Temperature, for 10 sec.
600
12
8.0
24
24
9.0
6.0
18
2500
±20
39
20
-55 to +175
300 (0.063 in. (1.6mm) from case)
V
A
V
W
°C
Mounting Torque, 6-32 or M3 Screw
Thermal / Mechanical Characteristics
Parameter
10 lbf·in (1.1 N·m)
Min.
Typ.
Max.
Units
RθJC
RθJC
RθCS
RθJA
Wt
Junction-to-Case- IGBT
Junction-to-Case- Diode
Case-to-Sink, flat, greased surface
Junction-to-Ambient, typical socket mount
Weight
––– ––– 3.8
––– ––– 6.0 °C/W
––– 0.50 –––
––– ––– 62
––– 2.0 ––– g
www.irf.com
1
04/27/04
1 page  
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20
18
16
14
12
10
8
6
4
2
0
5
ICE = 4.0A
ICE = 8.0A
ICE = 16A
10 15
VGE (V)
Fig. 9 - Typical VCE vs. VGE
TJ = -40°C
20
IRGIB7B60KDPbF
20
18
16
14
12
10
8
6
4
2
0
5
ICE = 4.0A
ICE = 8.0A
ICE = 16A
10 15
VGE (V)
Fig. 10 - Typical VCE vs. VGE
TJ = 25°C
20
20
18
16
14
12
10
8
6
4
2
0
5
ICE = 4.0A
ICE = 8.0A
ICE = 16A
10 15
VGE (V)
Fig. 11 - Typical VCE vs. VGE
TJ = 150°C
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20
100
80
TJ = 25°C
60 TJ = 150°C
40
20 TJ = 150°C
0
05
TJ = 25°C
10
VGE (V)
15
20
Fig. 12 - Typ. Transfer Characteristics
VCE = 360V; tp = 10µs
5
5 Page 
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600
500
400
300
200
100
0
-100
tf
Vce
90% Ice
5% Vce
5% Ice
Ice
Eoff Loss
12
10
8
6
4
2
0
-2
-200
0
0.2 0.4 0.6 0.8
-4
1
Time (uS)
Fig. WF1- Typ. Turn-off Loss Waveform
@ TJ = 150°C using Fig. CT.4
100
0
-100
-200
-300
-400
Peak
IRR
QRR
tRR
10%
Peak
IRR
15
10
5
0
-5
-10
-500
-15
-600
-0.15 -0.05 0.05
0.15
-20
0.25
time (µS)
Fig. WF3- Typ. Diode Recovery Waveform
@ TJ = 150°C using Fig. CT.4
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IRGIB7B60KDPbF
600 24
500 20
tr Vce
Ice
400 16
90% Ice
300
10% Ice
12
200 8
100 4
5% Vce
0
-100
0.3
Eon
Loss
0.5 0.7
Time (uS)
0
-4
0.9
Fig. WF2- Typ. Turn-on Loss Waveform
@ TJ = 150°C using Fig. CT.4
400 80
350
300 60
250
200 40
150
100 20
50
0
0.00
10.00
20.00 30.00
Time (uS)
40.00
0
50.00
Fig. WF4- Typ. S.C Waveform
@ TC = 150°C using Fig. CT.3
11
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