|
|
PDF IRG4BC40WL Data sheet ( Hoja de datos )
| Número de pieza | IRG4BC40WL | |
| Descripción | INSULATED GATE BIPOLAR TRANSISTOR | |
| Fabricantes | International Rectifier | |
| Logotipo |  |
|
Hay una vista previa y un enlace de descarga de IRG4BC40WL (archivo pdf) en la parte inferior de esta página. Total 10 Páginas | ||
|
No Preview Available !
www.DataSheet4U.com
PD - 95861
INSULATED GATE BIPOLAR TRANSISTOR
IRG4BC40WS
IRG4BC40WL
Features
Designed expressly for Switch-Mode Power
Supply and PFC (power factor correction)
applications
Industry-benchmark switching losses improve
efficiency of all power supply topologies
50% reduction of Eoff parameter
Low IGBT conduction losses
Latest-generation IGBT design and construction offers
tighter parameters distribution, exceptional reliability
Benefits
Lower switching losses allow more cost-effective
operation than power MOSFETs up to 150 kHz
("hard switched" mode)
Of particular benefit to single-ended converters and
boost PFC topologies 150W and higher
Low conduction losses and minimal minority-carrier
recombination make these an excellent option for
resonant mode switching as well (up to >>300 kHz)
Absolute Maximum Ratings
VCES
IC @ TC = 25°C
IC @ TC = 100°C
ICM
ILM
VGE
EARV
PD @ TC = 25°C
PD @ TC = 100°C
TJ
TSTG
Parameter
Collector-to-Emitter Breakdown Voltage
Continuous Collector Current
Continuous Collector Current
Pulsed Collector Current
Clamped Inductive Load Current
Gate-to-Emitter Voltage
Reverse Voltage Avalanche Energy
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
C
G
E
n-channel
VCES = 600V
VCE(on) typ. = 2.05V
@VGE = 15V, IC = 20A
D2Pak
TO-262
IRG4BC40WS IRG4BC40WL
Max.
600
40
20
160
160
± 20
160
160
65
-55 to + 150
300 (0.063 in. (1.6mm) from case )
Units
V
A
V
mJ
W
°C
Thermal Resistance
RθJC
RθCS
RθJA
Wt
Parameter
Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient (PCB Mounted steady-state)
Weight
www.irf.com
Typ.
0.5
2.0 (0.07)
Max.
0.77
40
Units
°C/W
g (oz)
1
4/19/04
1 page  
www.DataSheet4U.com
4000
3000
2000
1000
VGE = 0V, f = 1MHz
Cies = Cge + Cgc , Cce SHORTED
Cres = Cgc
Coes = Cce + Cgc
Cies
Coes
Cres
0
1 10 100
VCE , Collector-to-Emitter Voltage (V)
Fig. 7 - Typical Capacitance vs.
Collector-to-Emitter Voltage
1.0
VCC = 480V
VGE = 15V
0.9 TJ = 25 °C
IC = 20A
0.8
0.7
0.6
0.5
0.4
0.3
10
20 30 40 50
RG , Gate Resistance(Ω(O)hm)
60
Fig. 9 - Typical Switching Losses vs. Gate
Resistance
www.irf.com
IRG4BC40WS/L
20 VCC = 400V
I C = 20A
16
12
8
4
0
0 20 40 60 80 100
QG , Total Gate Charge (nC)
Fig. 8 - Typical Gate Charge vs.
Gate-to-Emitter Voltage
10 RG =1100OΩhm
VGE = 15V
VCC = 480V
1
IC = 40 A
IC = 20 A
IC = 10 A
0.1
-60 -40 -20 0 20 40 60 80 100 120 140 160
TJ , Junction Temperature (° C )
Fig. 10 - Typical Switching Losses vs.
Junction Temperature
5
5 Page | ||
| Páginas | Total 10 Páginas | |
| PDF Descargar | [ Datasheet IRG4BC40WL.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| IRG4BC40W | HEXFET Power MOSFET | International Rectifier |
| IRG4BC40WL | INSULATED GATE BIPOLAR TRANSISTOR | International Rectifier |
| IRG4BC40WLPBF | INSULATED GATE BIPOLAR TRANSISTOR | International Rectifier |
| IRG4BC40WS | INSULATED GATE BIPOLAR TRANSISTOR | International Rectifier |
| Número de pieza | Descripción | Fabricantes |
| SLA6805M | High Voltage 3 phase Motor Driver IC. |
 Sanken |
| SDC1742 | 12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters. |
 Analog Devices |
|
DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares, |
| DataSheet.es | 2020 | Privacy Policy | Contacto | Buscar |