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Número de pieza | BLA1011-300 | |
Descripción | Avionics LDMOS transistors | |
Fabricantes | NXP Semiconductors | |
Logotipo | ||
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BLA1011-300
Avionics LDMOS transistors
Rev. 01 — 3 April 2007
Product data sheet
1. Product profile
1.1 General description
300 W LDMOS pulsed power transistor for TCAS and IFF applications at frequencies from
1030 MHz to 1090 MHz.
Table 1. Typical performance
RF performance at Tcase = 25 °C in a common source class-AB production test circuit; tp = 50 µs;
δ = 2 %.
Mode of operation
f
(MHz)
IDq
(mA)
VDS
(V)
PL
(W)
Gp
(dB)
ηD
(%)
Pulsed class-AB
1030 to 1090
150 32
300
16.5 57
CAUTION
This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken
during transport and handling.
1.2 Features
I Typical performance at frequencies between 1030 MHz and 1090 MHz, a supply
voltage of 32 V, an IDq of 150 mA, a tp of 50 µs and a δ of 2 %:
N Output power = 300 W
N Power gain = 16.5 dB (typ)
N Efficiency = 57 % (typ)
I Easy power control
I Excellent ruggedness
I High efficiency
I Excellent thermal stability
I Designed for operation in 1030 MHz to 1090 MHz band
I Internally matched for ease of use
1.3 Applications
I RF power amplifiers for Avionics applications in the 1030 MHz to 1090 MHz frequency
band
1 page www.DataSheet4U.com
NXP Semiconductors
BLA1011-300
Avionics LDMOS transistors
400
PL
(W)
300
200
001aag192
(3)
(1)
(2)
100
0
0 2 4 6 8 10
Pi (W)
(1) f = 1030 MHz
(2) f = 1060 MHz
(3) f = 1090 MHz
BLA1011-300 in a wideband circuit; VDS = 32 V;
IDq = 150 mA; tp = 50 µs; δ = 2 %.
Fig 4. Load power as a function of input power;
typical values
20
Gp
(dB)
18
16
ηD
Gp
001aag193
70
ηD
(%)
60
50
14 40
12 30
10
1020
1040
1060
20
1080
1100
f (MHz)
VDS = 32 V; IDq = 150 mA; tp = 50 µs; δ = 2 %.
Fig 5. Power gain and drain efficiency as functions of
frequency; typical values
BLA1011-300_1
Product data sheet
Rev. 01 — 3 April 2007
© NXP B.V. 2007. All rights reserved.
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Número de pieza | Descripción | Fabricantes |
BLA1011-300 | Avionics LDMOS transistors | NXP Semiconductors |
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