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PDF BLA1011S-200 Data sheet ( Hoja de datos )

Número de pieza BLA1011S-200
Descripción Avionics LDMOS transistor
Fabricantes NXP Semiconductors 
Logotipo NXP Semiconductors Logotipo



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No Preview Available ! BLA1011S-200 Hoja de datos, Descripción, Manual

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BLA1011-200; BLA1011S-200
Avionics LDMOS transistor
Rev. 08 — 26 October 2005
Product data sheet
1. Product profile
CAUTION
1.1 General description
200 W LDMOS avionics power transistor for transmitter applications at frequencies from
1030 MHz to 1090 MHz.
Table 1: Typical performance
RF performance at Th = 25 °C in a common source class-AB test circuit; IDq = 150 mA; typical
values.
Mode of operation
Conditions
VDS PL Gp ηD tr
tf
(V) (W) (dB) (%) (ns) (ns)
Pulsed class-AB:
tp = 50 µs; δ = 2 %
36 200 15 50 35 6
1030 MHz to 1090 MHz tp = 128 µs; δ = 2 % 36 250 14 50 35 6
tp = 340 µs; δ = 1 % 36 250 14 50 35 6
This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken
during transport and handling.
1.2 Features
s Typical pulsed class-AB performance at a frequencies from 1030 MHz to 1090 MHz, a
supply voltage of 36 V and an IDq of 150 mA:
x Load power 200 W
x Gain 13 dB
x Efficiency 45 %
x Rise time 50 ns
x Fall time 50 ns
s High power gain
s Easy power control
s Excellent ruggedness
s Source on mounting flange eliminates DC isolators, reducing common mode
inductance
1.3 Applications
s Avionics transmitter applications in the 1030 MHz to 1090 MHz frequency range.

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BLA1011S-200 pdf
www.DataSheet4U.com
Philips Semiconductors
BLA1011-200; BLA1011S-200
Avionics LDMOS transistor
20
Gp
(dB)
15
10
5
Gp
mgw037
80
ηD
(%)
60
ηD
40
20
5
Zi
(W)
4
3
2
1
xi
ri
mgw038
0
1020
1040
1060
0
1080
1100
f (MHz)
VDS = 36 V; IDq = 150 mA; PL = 200 W; tp = 50 µs;
δ=2%
Fig 5. Power gain and drain efficiency a functions of
frequency; typical values
0
1020
1040
1060
1080
1100
f (MHz)
VDS = 36 V; IDq = 150 mA; PL = 200 W; tp = 50 µs;
δ=2%
Fig 6. Input Impedance as a function of frequency
(series components); typical values
4
ZL
(W)
2
mgw039
RL
0
XL
2
4
1020
1040
1060
1080
1100
f (MHz)
VDS = 36 V; IDq = 150 mA; PL = 200 W; tp = 50 µs; δ = 2 %
Fig 7. Load impedance as a function of frequency (series components); typical values
9397 750 14634
Product data sheet
Rev. 08 — 26 October 2005
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.
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BLA1011S-200 arduino
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Philips Semiconductors
BLA1011-200; BLA1011S-200
Avionics LDMOS transistor
11. Revision history
Table 10: Revision history
Document ID
Release date Data sheet status
Change notice Doc. number Supersedes
BLA1011-200_BLA1 20051026
011S-200_8
Product data sheet
-
9397 750 14634 BLA1011-200_7
Modifications:
The format of this data sheet has been redesigned to comply with the new presentation and
information standard of Philips Semiconductors.
SOT502B package added.
BLA1011-200_7
20031111
Product specification -
9397 750 12246 BLA1011-200_6
BLA1011-200_6
20020318
Product specification -
9397 750 09414 BLA1011-200_5
BLA1011-200_5
20010515
Product specification -
9397 750 08376 BLA1011-200_4
BLA1011-200_4
20010417
Product specification -
9397 750 08139 BLA1011-200_N_3
BLA1011-200_N_3 20010302
Product specification -
9397 750 08109 BLA1011-200_N_2
BLA1011-200_N_2 20001201
Product specification -
9397 750 07638 BLA1011-200_N_1
BLA1011-200_N_1 20000906
Product specification -
9397 750 07326 -
9397 750 14634
Product data sheet
Rev. 08 — 26 October 2005
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.
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