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PDF BGD712C Data sheet ( Hoja de datos )
| Número de pieza | BGD712C | |
| Descripción | 18 dB gain push-pull amplifier | |
| Fabricantes | NXP Semiconductors | |
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BGD712C
750 MHz, 18 dB gain push-pull amplifier
Rev. 01 — 2 May 2006
Product data sheet
1. Product profile
CAUTION
1.1 General description
Hybrid high dynamic range amplifier module in SOT115J package operating at a supply
voltage of 24 V (DC).
This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken
during transport and handling.
1.2 Features
I Excellent linearity
I Extremely low noise
I Excellent return loss properties
I Silicon nitride passivation
I Rugged construction
I Gold metallization ensures excellent reliability
1.3 Applications
I CATV systems operating in the 40 MHz to 750 MHz frequency range.
1.4 Quick reference data
Table 1:
Symbol
Gp
Quick reference data
Parameter
power gain
Itot total current
Conditions
f = 45 MHz
f = 750 MHz
VB = 24 V
Min Typ
18.2 -
19 -
[1] 380 -
Max Unit
18.8 dB
20 dB
410 mA
[1] The module normally operates at VB = 24 V, but is able to withstand supply transients up to 30 V.
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Philips Semiconductors
BGD712C
750 MHz, 18 dB gain push-pull amplifier
7. Revision history
Table 6: Revision history
Document ID
Release date
BGD712C_1
20060502
Data sheet status
Product data sheet
Change notice
-
Supersedes
-
BGD712C_1
Product data sheet
Rev. 01 — 2 May 2006
© Koninklijke Philips Electronics N.V. 2006. All rights reserved.
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