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PDF IRFR3412PBF Data sheet ( Hoja de datos )
| Número de pieza | IRFR3412PBF | |
| Descripción | SMPS MOSFET | |
| Fabricantes | International Rectifier | |
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PD - 95498A
IRFR3412PbF
SMPS MOSFET
Applications
l Switch Mode Power Supply (SMPS)
l Motor Drive
l Bridge Converters
l All Zero Voltage Switching
l Lead-Free
VDSS
100V
IRFU3412PbF
HEXFET® Power MOSFET
RDS(on) max
0.025Ω
ID
48A
Benefits
l Low Gate Charge Qg results in Simple
Drive Requirement
l Improved Gate, Avalanche and Dynamic
dv/dt Ruggedness
l Fully Characterized Capacitance and
Avalanche Voltage and Current
l Enhanced Body Diode dv/dt Capability
D-Pak
IRFR3412
I-Pak
IRFU3412
Absolute Maximum Ratings
ID @ TC = 25°C
ID @ TC = 100°C
IDM
PD @TC = 25°C
VGS
dv/dt
TJ
TSTG
Parameter
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Peak Diode Recovery dv/dt
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 second
Mounting torqe, 6-32 or M3 screw
Max.
48
34
190
140
0.95
± 20
6.4
-55 to + 175
300(1.6mm from case )
10 lbf•in (1.1N•m)
Units
A
W
W/°C
V
V/ns
°C
Diode Characteristics
Symbol
Parameter
IS Continuous Source Current
(Body Diode)
ISM Pulsed Source Current
(Body Diode)
VSD
trr
Qrr
IRRM
ton
Diode Forward Voltage
Reverse Recovery Time
Reverse RecoveryCharge
Reverse RecoveryCurrent
Forward Turn-On Time
www.irf.com
Min. Typ. Max. Units
Conditions
––– ––– 48
A
MOSFET symbol
showing the
integral reverse
––– ––– 190
p-n junction diode.
G
D
S
––– ––– 1.3 V TJ = 25°C, IS = 29A, VGS = 0V
––– 68 100 ns TJ = 125°C, IF = 29A
––– 160 240 nC di/dt = 100A/µs
––– 4.5 6.8 A
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
1
12/03/04
1 page  
50
LIMITED BY PACKAGE
40
30
20
10
0
25 50 75 100 125 150 175
TC, Case Temperature
( °C)
Fig 9. Maximum Drain Current Vs.
Case Temperature
10
IRFR/U3412PbF
VDS
VGS
RG
RD
D.U.T.
VGS
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
+-VDD
Fig 10a. Switching Time Test Circuit
VDS
90%
10%
VGS
td(on) tr
td(off) tf
Fig 10b. Switching Time Waveforms
1
D = 0.50
0.20
0.10
0.1
0.05
0.02
0.01
0.01
0.00001
SINGLE PULSE
(THERMAL RESPONSE)
0.0001
0.001
t1, Rectangular Pulse Duration (sec)
P DM
t1
t2
Notes:
1. Duty factor D =
t1/ t 2
2. Peak T J = P DM x Z thJC
+T C
0.01
0.1
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
www.irf.com
5
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| Páginas | Total 10 Páginas | |
| PDF Descargar | [ Datasheet IRFR3412PBF.PDF ] | |
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