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PDF IRF9410PBF Data sheet ( Hoja de datos )
| Número de pieza | IRF9410PBF | |
| Descripción | Power MOSFET ( Transistor ) | |
| Fabricantes | International Rectifier | |
| Logotipo |  |
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PD - 95260
l Generation V Technology
l Ultra Low On-Resistance
l N-Channel MOSFET
l Surface Mount
l Very Low Gate Charge and
Switching Losses
l Fully Avalanche Rated
l Lead-Free
IRF9410PbF
S1
S2
S3
G4
HEXFET® Power MOSFET
AA
8D
7D
VDSS = 30V
6D
5 D RDS(on) = 0.030Ω
Top View
Description
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This
benefit, combined with the fast switching speed and
ruggedized device design that HEXFET Power
MOSFETs are well known for, provides the designer
with an extremely efficient and reliable device for use
in a wide variety of applications.
Recommended upgrade: IRF7403 or IRF7413
Lower profile/smaller equivalent: IRF7603
The SO-8 has been modified through a customized
leadframe for enhanced thermal characteristics and
multiple-die capability making it ideal in a variety of
power applications. With these improvements, multiple
devices can be used in an application with dramatically
reduced board space. The package is designed for
vapor phase, infra red, or wave soldering techniques.
SO-8
Absolute Maximum Ratings ( TA = 25°C Unless Otherwise Noted)
Symbol
Maximum
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
TA = 25°C
TA = 70°C
Continuous Source Current (Diode Conduction)
Maximum Power Dissipation
Single Pulse Avalanche Energy
TA = 25°C
TA = 70°C
VDS
VGS
ID
IDM
IS
PD
EAS
30
± 20
7.0
5.8
37
2.8
2.5
1.6
70
Avalanche Current
IAR 4.2
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
EAR
dv/dt
0.25
5.0
Junction and Storage Temperature Range
TJ, TSTG
-55 to + 150
Thermal Resistance Ratings
Parameter
Maximum Junction-to-Ambient
www.irf.com
Symbol
RθJA
Limit
50
Units
V
A
W
mJ
A
mJ
V/ ns
°C
Units
°C/W
1
09/21/04
1 page  
IRF9410PbF
1000
800
600
400
V GS = 0V,
f = 1MHz
Ciss = Cgs + Cgd , Cds SHORTED
Crss = Cgd
Coss = Cds + Cgd
Ciss
Coss
200 Crss
0A
1 10 100
VDS , Drain-to-Source Voltage (V)
Fig 9. Typical Capacitance Vs.
Drain-to-Source Voltage
20
ID = 2.0A
16
VDS = 15V
12
8
4
0
0 6 12 18 24 30
QG , Total Gate Charge (nC)
Fig 10. Typical Gate Charge Vs.
Gate-to-Source Voltage
100
0.50
10 0.20
0.10
0.05
0.02
1
0.01
0.1
0.00001
PDM
t1
t2
SINGLE PULSE
(THERMAL RESPONSE)
0.0001
0.001
Notes:
1. Duty factor D = t1 / t 2
2. Peak T J = P DM x Z thJA + TA
0.01 0.1
1
t1, Rectangular Pulse Duration (sec)
10
100
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
www.irf.com
5
5 Page | ||
| Páginas | Total 7 Páginas | |
| PDF Descargar | [ Datasheet IRF9410PBF.PDF ] | |
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