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PDF IRF7493PBF Data sheet ( Hoja de datos )
| Número de pieza | IRF7493PBF | |
| Descripción | Power MOSFET ( Transistor ) | |
| Fabricantes | International Rectifier | |
| Logotipo |  |
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PD - 95289
IRF7493PbF
Applications
l High frequency DC-DC converters
l Lead-Free
HEXFET® Power MOSFET
VDSS RDS(on) max Qg (typ.)
:80V 15m @VGS=10V 35nC
Benefits
l Low Gate-to-Drain Charge to Reduce
Switching Losses
l Fully Characterized Capacitance Including
Effective COSS to Simplify Design, (See
App. Note AN1001)
S
S
S
l Fully Characterized Avalanche Voltage G
and Current
18
27
36
45
Top View
AA
D
D
D
D
SO-8
Absolute Maximum Ratings
Parameter
VDS Drain-to-Source Voltage
VGS
ID @ TC = 25°C
ID @ TC = 70°C
IDM
PD @TC = 25°C
PD @TC = 70°C
Gate-to-Source Voltage
Continuous Drain Current, VGS @ 10V
cContinuous Drain Current, VGS @ 10V
Pulsed Drain Current
fMaximum Power Dissipation
fMaximum Power Dissipation
TJ
TSTG
Linear Derating Factor
Operating Junction and
Storage Temperature Range
Thermal Resistance
Parameter
fRθJC
RθJA
Junction-to-Lead
Junction-to-Ambient
Notes through
are on page 9
Max.
80
± 20
9.3
7.4
74
2.5
1.6
0.02
-55 to + 150
Units
V
A
W
W/°C
°C
Typ.
–––
–––
Max.
20
50
Units
www.irf.com
1
09/21/04
1 page  
IRF7493PbF
10
8
6
4
2
0
25
50 75 100 125
TC , Case Temperature (°C)
150
Fig 9. Maximum Drain Current Vs.
Ambient Temperature
100
D = 0.50
10 0.20
0.10
0.05
1 0.02
0.01
VDS
VGS
RG
RD
D.U.T.
10V
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
+-VDD
Fig 10a. Switching Time Test Circuit
VDS
90%
10%
VGS
td(on) tr
td(off) tf
Fig 10b. Switching Time Waveforms
0.1
SINGLE PULSE
( THERMAL RESPONSE )
0.01
1E-005
0.0001
0.001
0.01
0.1
t1 , Rectangular Pulse Duration (sec)
1
10
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
www.irf.com
100
5
5 Page | ||
| Páginas | Total 9 Páginas | |
| PDF Descargar | [ Datasheet IRF7493PBF.PDF ] | |
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