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PDF IRF7484PBF Data sheet ( Hoja de datos )
| Número de pieza | IRF7484PBF | |
| Descripción | Power MOSFET ( Transistor ) | |
| Fabricantes | International Rectifier | |
| Logotipo |  |
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PD - 95281
IRF7484PbF
Typical Applications
l Relay replacement
l Anti-lock Braking System
l Air Bag
l Lead-Free
HEXFET® Power MOSFET
VDSS RDS(on) max (mW) ID
40V 10@VGS = 7.0V 14A
Benefits
l Advanced Process Technology
l Ultra Low On-Resistance
l Fast Switching
l Repetitive Avalanche Allowed up to Tjmax
S
S
Description
Specifically designed for Automotive applications, this S
Stripe Planar design of HEXFET® Power MOSFETs G
utilizes the latest processing techniques to achieve
extremely low on-resistance per silicon area. Additional
features of this HEXFET power MOSFET are a 150°C
junction operating temperature, fast switching speed
and improved repetitive avalanche rating. These benefits
combine to make this design an extremely efficient and
reliable device for use in Automotive applications and a
wide variety of other applications.
18
27
36
45
Top View
AA
D
D
D
D
SO-8
Absolute Maximum Ratings
ID @ TA = 25°C
ID @ TA = 70°C
IDM
PD @TA = 25°C
VGS
EAS
IAR
EAR
TJ, TSTG
Parameter
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Junction and Storage Temperature Range
Thermal Resistance
Symbol
RθJL
RθJA
Parameter
Junction-to-Drain Lead
Junction-to-Ambient
Max.
14
11
110
2.5
0.02
± 8.0
230
See Fig.16c, 16d, 19, 20
-55 to + 150
Units
A
W
W/°C
V
mJ
A
mJ
°C
Typ.
–––
–––
Max.
20
50
Units
°C/W
www.irf.com
1
09/21/04
1 page  
IRF7484PbF
15
12
9
6
3
0
25 50 75 100 125 150
TC, Case Temperature
( ° C)
Fig 9. Maximum Drain Current Vs.
Case Temperature
100
VDS
VGS
RG
RD
D.U.T.
VGS
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
+-VDD
Fig 10a. Switching Time Test Circuit
VDS
90%
10%
VGS
td(on) tr
td(off) tf
Fig 10b. Switching Time Waveforms
D = 0.50
10 0.20
0.10
0.05
0.02
1
0.01
0.1
0.0001
SINGLE PULSE
(THERMAL RESPONSE)
0.001
0.01 0.1
1
t1, Rectangular Pulse Duration (sec)
P DM
t1
t2
Notes:
1. Duty factor D =
t1/ t 2
2. Peak T J = P DM x Z thJA
+T A
10 100
100
Fig 11. Typical Effective Transient Thermal Impedance, Junction-to-Ambient
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