DataSheet.es    


PDF IRF7484Q Data sheet ( Hoja de datos )

Número de pieza IRF7484Q
Descripción AUTOMOTIVE MOSFET
Fabricantes International Rectifier 
Logotipo International Rectifier Logotipo



Hay una vista previa y un enlace de descarga de IRF7484Q (archivo pdf) en la parte inferior de esta página.


Total 10 Páginas

No Preview Available ! IRF7484Q Hoja de datos, Descripción, Manual

www.DataSheet4U.com
PD - 94803A
AUTOMOTIVE MOSFET
Typical Applications
O Relay replacement
O Anti-lock Braking System
O Air Bag
IRF7484Q
HEXFET® Power MOSFET
VDSS RDS(on) max (mW) ID
Benefits
O Advanced Process Technology
O Ultra Low On-Resistance
O Fast Switching
O Repetitive Avalanche Allowed up to Tjmax
40V
S1
10@VGS = 7.0V
AA
8D
14A
S
Description
Specifically designed for Automotive applications, this S
Stripe Planar design of HEXFET® Power MOSFETs G
utilizes the latest processing techniques to achieve
extremely low on-resistance per silicon area. Additional
features of this HEXFET power MOSFET are a 150°C
junction operating temperature, fast switching speed
and improved repetitive avalanche rating. These benefits
combine to make this design an extremely efficient and
reliable device for use in Automotive applications and a
wide variety of other applications.
27
36
45
Top View
D
D
D
SO-8
Absolute Maximum Ratings
ID @ TA = 25°C
ID @ TA = 70°C
IDM
PD @TA = 25°C
VGS
EAS
IAR
EAR
TJ, TSTG
Parameter
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current 
Power Dissipationƒ
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy„
Avalanche Current
Repetitive Avalanche Energy†
Junction and Storage Temperature Range
Thermal Resistance
Symbol
RθJL
RθJA
Parameter
Junction-to-Drain Lead
Junction-to-Ambient ƒ
Max.
14
11
110
2.5
0.02
± 8.0
230
See Fig.16c, 16d, 19, 20
-55 to + 150
Units
A
W
W/°C
V
mJ
A
mJ
°C
Typ.
–––
–––
Max.
20
50
Units
°C/W
www.irf.com
1
01/04/05

1 page




IRF7484Q pdf
IRF7484Q
15
12
9
6
3
0
25 50 75 100 125 150
TC, Case Temperature
( ° C)
Fig 9. Maximum Drain Current Vs.
Case Temperature
100
VDS
VGS
RG
RD
D.U.T.
VGS
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
+-VDD
Fig 10a. Switching Time Test Circuit
VDS
90%
10%
VGS
td(on) tr
td(off) tf
Fig 10b. Switching Time Waveforms
D = 0.50
10 0.20
0.10
0.05
0.02
1
0.01
0.1
0.0001
SINGLE PULSE
(THERMAL RESPONSE)
0.001
0.01 0.1
1
t1, Rectangular Pulse Duration (sec)
P DM
t1
t2
Notes:
1. Duty factor D =
t1/ t 2
2. Peak T J = P DM x Z thJA
+T A
10 100
Fig 11. Typical Effective Transient Thermal Impedance, Junction-to-Ambient
www.irf.com
100
5

5 Page










PáginasTotal 10 Páginas
PDF Descargar[ Datasheet IRF7484Q.PDF ]




Hoja de datos destacado

Número de piezaDescripciónFabricantes
IRF7484HEXFET Power MOSFETInternational Rectifier
International Rectifier
IRF7484PBFPower MOSFET ( Transistor )International Rectifier
International Rectifier
IRF7484QAUTOMOTIVE MOSFETInternational Rectifier
International Rectifier
IRF7484QPBFPower MOSFET ( Transistor )International Rectifier
International Rectifier

Número de piezaDescripciónFabricantes
SLA6805M

High Voltage 3 phase Motor Driver IC.

Sanken
Sanken
SDC1742

12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters.

Analog Devices
Analog Devices


DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares,
permitiéndote verlos en linea o descargarlos en PDF.


DataSheet.es    |   2020   |  Privacy Policy  |  Contacto  |  Buscar