DataSheet.es    


PDF IRF6622TRPBF Data sheet ( Hoja de datos )

Número de pieza IRF6622TRPBF
Descripción DirectFET Power MOSFET
Fabricantes International Rectifier 
Logotipo International Rectifier Logotipo



Hay una vista previa y un enlace de descarga de IRF6622TRPBF (archivo pdf) en la parte inferior de esta página.


Total 9 Páginas

No Preview Available ! IRF6622TRPBF Hoja de datos, Descripción, Manual

www.DataSheet4U.com
PD - 97244
IRF6622PbF
IRF6622TRPbF
l RoHs Compliant 
l Lead-Free (Qualified up to 260°C Reflow)
l Application Specific MOSFETs
l Ideal for CPU Core DC-DC Converters
l Low Conduction Losses
l High Cdv/dt Immunity
l Low Profile (<0.7mm)
l Dual Sided Cooling Compatible 
l Compatible with existing Surface Mount Techniques 
DirectFET™ Power MOSFET ‚
Typical values (unless otherwise specified)
VDSS
VGS
RDS(on)
RDS(on)
25V max ±20V max 4.9m@ 10V 6.8m@ 4.5V
Qg tot Qgd
Qgs2
Qrr
Qoss Vgs(th)
11nC 3.8nC 1.6nC 7.1nC 7.7nC 1.8V
Applicable DirectFET Outline and Substrate Outline (see p.7,8 for details)
SQ SX ST
MQ MX MT
SQ
MP
DirectFET™ ISOMETRIC
Description
The IRF6622PbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve
the lowest on-state resistance in a package that has the footprint of a Micro-8 and only 0.7 mm profile. The DirectFET package is compatible
with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering
techniques. Application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET package allows dual
sided cooling to maximize thermal transfer in power systems, improving previous best thermal resistance by 80%.
The IRF6622PbF balances industry leading on-state resistance while minimizing gate charge along with ultra low package inductance to
reduce both conduction and switching losses. The reduced losses make this product ideal for high frequency/high efficiency DC-DC convert-
ers that power high current loads such as the latest generation of microprocessors. The IRF6622PbF has been optimized for parameters that
are critical in synchronous buck converter’s ControlFET sockets.
Absolute Maximum Ratings
Parameter
VDS Drain-to-Source Voltage
VGS
ID @ TA = 25°C
ID @ TA = 70°C
ID @ TC = 25°C
IDM
EAS
IAR
Gate-to-Source Voltage
eContinuous Drain Current, VGS @ 10V
eContinuous Drain Current, VGS @ 10V
fContinuous Drain Current, VGS @ 10V
gPulsed Drain Current
hSingle Pulse Avalanche Energy
ÃgAvalanche Current
Max.
25
±20
15
12
59
120
13
12
Units
V
A
mJ
A
20
ID = 15A
15
10
TJ = 125°C
5
TJ = 25°C
0
3 4 5 6 7 8 9 10
VGS, Gate -to -Source Voltage (V)
Notes:
Fig 1. Typical On-Resistance Vs. Gate Voltage
 Click on this section to link to the appropriate technical paper.
‚ Click on this section to link to the DirectFET Website.
ƒ Surface mounted on 1 in. square Cu board, steady state.
www.irf.com
6.0
5.0 VDS= 20V
VDS= 13V
4.0 VDS= 5.0V
3.0
ID= 12A
2.0
1.0
0.0
0
2 4 6 8 10 12
QG Total Gate Charge (nC)
14
Fig 2. Typical Total Gate Charge vs Gate-to-Source Voltage
„ TC measured with thermocouple mounted to top (Drain) of part.
… Repetitive rating; pulse width limited by max. junction temperature.
† Starting TJ = 25°C, L = 0.18mH, RG = 25, IAS = 12A.
1
07/18/06

1 page




IRF6622TRPBF pdf
1000
100
10 TJ = 150°C
TJ = 25°C
TJ = -40°C
1
VGS = 0V
0
0.2 0.4 0.6 0.8 1.0 1.2
VSD, Source-to-Drain Voltage (V)
Fig 10. Typical Source-Drain Diode Forward Voltage
60
IRF6622PbF
1000
100
OPERATION IN THIS AREA
LIMITED BY RDS(on)
100µsec
10
1
0.1
0.01
TA = 25°C
TJ = 150°C
Single Pulse
0.01
0.10
1.00
1msec
10msec
10.00 100.00
VDS, Drain-to-Source Voltage (V)
Fig11. Maximum Safe Operating Area
3.0
50 2.5
40
30
20
10
0
25 50 75 100 125 150
TC , Case Temperature (°C)
Fig 12. Maximum Drain Current vs. Case Temperature
60
50
40
2.0
1.5 ID = 25µA
ID = 50µA
1.0 ID = 100µA
ID = 250µA
0.5
ID = 1mA
ID = 1.0A
0.0
-75 -50 -25 0 25 50 75 100 125 150
TJ , Temperature ( °C )
Fig 13. Typical Threshold Voltage vs. Junction
Temperature
ID
TOP
3.7A
5.3A
BOTTOM 12A
30
20
10
www.irf.com
0
25 50 75 100 125 150
Starting TJ , Junction Temperature (°C)
Fig 14. Maximum Avalanche Energy vs. Drain Current
5

5 Page










PáginasTotal 9 Páginas
PDF Descargar[ Datasheet IRF6622TRPBF.PDF ]




Hoja de datos destacado

Número de piezaDescripciónFabricantes
IRF6622TRPBFDirectFET Power MOSFETInternational Rectifier
International Rectifier

Número de piezaDescripciónFabricantes
SLA6805M

High Voltage 3 phase Motor Driver IC.

Sanken
Sanken
SDC1742

12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters.

Analog Devices
Analog Devices


DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares,
permitiéndote verlos en linea o descargarlos en PDF.


DataSheet.es    |   2020   |  Privacy Policy  |  Contacto  |  Buscar