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PDF FL850-03-80 Data sheet ( Hoja de datos )
| Número de pieza | FL850-03-80 | |
| Descripción | High Power Type LED | |
| Fabricantes | ETC | |
| Logotipo |  |
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FL850-03-80 High Power type LED
FL850-03-80 is an AlGaAs LED mounted on a lead frame and molded with super beam lens.
On forward bias, it emits a band of visible light which peaks 850nm.
These devices are intended to be operated at pulsed current of 4A under maximum 4.5V
for stable long life.
♦Outer dimension (Unit: mm)
♦Specifications
1) Product Name Super Flux mold type LED
2) Type No.
FL850-03-80
3) Chip
(1) Chip Material GaAlAs
(2) Chip Dimension 800um*800um
(3) Peak Wavelength 850nm typ.
4) Package
(1) Type
Super Beam type LED
(2) Resin Material Epoxy Resin
(3) Lead Frame
Soldered
♦Absolute Maximum Ratings
Item Symbol Maximum Rated Value Unit Ambient Temperature
Power Dissipation
PD
310 mW Ta=25°C
Forward Current
IF
200 mA Ta=25°C
Pulse Forward Current
IFP
4000
mA Ta=25°C
Reverse Voltage
VR
10
V Ta=25°C
Operating Temperature TOPR
-30 ~ +85
°C
Storage Temperature
TSTG
-30 ~ +100
°C
Soldering Temperature TSOL
260
°C
‡Pulse Forward Current condition: Duty=1% and Pulse Width=10us.
‡Soldering condition: Soldering condition must be completed within 3 seconds at 260°C
♦Electro-Optical Characteristics [Ta=25°C]
Item Symbol Condition Minimum Typical Maximum Unit
Forward Voltage
VF IF=100mA
Pulsed Forward Voltage VF
IFP=4A
Reverse Current
IR VR=10V
Total Radiated Power
PO IF=100mA 35.0
Radiant Intensity
IE IF=100mA
Peak Wavelength
λP IF=50mA 840
Half Width
∆λ IF=50mA
Viewing Half Angle
θ 1/2 IF=50mA
Rise Time
IF=50mA
Fall Time
IF=50mA
‡Total Radiated Power is measured by Photodyne #500
‡Radiant Intensity is measured by Tektronix J-6512.
1.4
3.3
60.0
230
850
40
±8
15
10
1.5 V
4.5 V
10 uA
mW
mW/sr
860 nm
nm
deg.
ns
ns
1 page | ||
| Páginas | Total 1 Páginas | |
| PDF Descargar | [ Datasheet FL850-03-80.PDF ] | |
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