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PDF DMBT9022 Data sheet ( Hoja de datos )

Número de pieza DMBT9022
Descripción NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR
Fabricantes Diodes Incorporated 
Logotipo Diodes Incorporated Logotipo



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DMBT9022
NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR
Features
· Epitaxial Planar Die Construction
· Ideal for Medium Power Amplification and
Switching
· High Current Gain
Mechanical Data
· Case: SOT-23, Molded Plastic
· Terminals: Solderable per MIL-STD-202,
Method 208
· Terminal Connections: See Diagram
· Marking: K1S
· Weight: 0.008 grams (approx.)
A
C
TOP VIEW
BC
BE
ED
G
H
K
J
L
M
Maximum Ratings @ TA = 25°C unless otherwise specified
Characteristic
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current - Continuous (Note 1)
Power Dissipation (Note 1)
Thermal Resistance, Junction to Ambient (Note 1)
Operating and Storage and Temperature Range
Symbol
VCBO
VCEO
VEBO
IC
Pd
RqJA
Tj, TSTG
DMBT9022
50
40
5.0
100
225
556
-55 to +150
SOT-23
Dim Min Max
A 0.37 0.51
B 1.19 1.40
C 2.10 2.50
D 0.89 1.05
E 0.45 0.61
G 1.78 2.05
H 2.65 3.05
J 0.013 0.15
K 0.89 1.10
L 0.45 0.61
M 0.076 0.178
All Dimensions in mm
Unit
V
V
V
mA
mW
K/W
°C
Electrical Characteristics @ TA = 25°C unless otherwise specified
Characteristic
OFF CHARACTERISTICS (Note 2)
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current
Emitter Cutoff Current
ON CHARACTERISTICS (Note 2)
DC Current Gain
Collector-Emitter Saturation Voltage
SMALL SIGNAL CHARACTERISTICS
Output Capacitance
Symbol Min
Max
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
IEBO
50
40
5.0
¾
¾
¾
¾
¾
500
500
hFE
VCE(SAT)
270
¾
630
0.4
Cobo 2.0 Typ.
3.5
Notes: 1. Valid provided that terminals are kept at ambient temperature.
2. Pulse test: Pulse width £ 300ms, duty cycle £ 2%.
Unit
Test Condition
V IC = 50mA, IE = 0
V IC = 1.0mA, IB = 0
V IE = 50mA, IC = 0
nA VCB = 30V
nA VEB = 4.0V
¾ IC = 1.0mA, VCE = 6.0V
V IC = 50mA, IB = 5.0mA
pF VCB = 12V, f = 1.0MHz, IE = 0
DS30056 Rev. 2P-5
1 of 1
DMBT9022

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