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PDF DMBT1815 Data sheet ( Hoja de datos )
| Número de pieza | DMBT1815 | |
| Descripción | TECHNICAL SPECIFICATIONS OF PNP EPITAXIAL PLANAR TRANSISTOR | |
| Fabricantes | Dc Components | |
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DC COMPONENTS CO., LTD.
R DISCRETE SEMICONDUCTORS
DMBT1815
TECHNICAL SPECIFICATIONS OF NPN EPITAXIAL PLANAR TRANSISTOR
Description
Designed for use in driver stage of AF amplifier and
general purpose amplification.
Pinning
1 = Base
2 = Emitter
3 = Collector
Absolute Maximum Ratings(TA=25oC)
Characteristic
Symbol Rating
Collector-Base Voltage
VCBO
60
Collector-Emitter Voltage
VCEO
50
Emitter-Base Voltage
VEBO
5
Collector Current
IC 150
Total Power Dissipation
PD 225
Junction Temperature
TJ +150
Storage Temperature
TSTG -55 to +150
Unit
V
V
V
mA
mW
oC
oC
.020(0.50)
.012(0.30)
SOT-23
3
.063(1.60) .108(0.65)
.055(1.40) .089(0.25)
12
.091(2.30)
.067(1.70)
.118(3.00)
.110(2.80)
.045(1.15)
.034(0.85)
.051(1.30)
.035(0.90)
.0043(0.11)
.0035(0.09)
.026(0.65)
.010(0.25)
.004
(0.10)
Max
.027(0.67)
.013(0.32)
Dimensions in inches and (millimeters)
Electrical Characteristics
(Ratings at 25oC ambient temperature unless otherwise specified)
Characteristic
Symbol Min
Typ
Collector-Base Breakdown Voltage
BVCBO 60
-
Collector-Emitter Breakdown Voltage BVCEO 50
-
Emitter-Base Breakdown Volatge
BVEBO
5
-
Collector Cutoff Current
ICBO
-
-
Emitter Cutoff Current
Collector-Emitter Saturation Voltage(1)
Base-Emitter Saturation Voltage(1)
IEBO
VCE(sat)
VBE(sat)
-
-
-
-
-
-
DC Current Gain(1)
hFE1
hFE2
120
25
-
-
Transition Frequency
fT 80
-
Output Capacitance
Cob -
-
(1)Pulse Test: Pulse Width 380µs, Duty Cycle 2%
Max
-
-
-
100
100
0.25
1
700
-
-
3.5
Classification of hFE1
Rank
Y
Range
120~240
G
200~400
B
350~700
Unit
V
V
V
nA
nA
V
V
-
-
MHz
pF
Test Conditions
IC=100µA
IC=1mA
IE=10µA
VCB=60V
VEB=5V
IC=100mA, IB=10mA
IC=100mA, IB=10mA
IC=2mA, VCE=6V
IC=150mA, VCE=6V
IC=1mA, VCE=10V, f=100MHz
VCB=10V, f=1MHz
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