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PDF DC8550S Data sheet ( Hoja de datos )
| Número de pieza | DC8550S | |
| Descripción | TECHNICAL SPECIFICATIONS OF PNP EPITAXIAL PLANAR TRANSISTOR | |
| Fabricantes | Dc Components | |
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DC COMPONENTS CO., LTD.
R DISCRETE SEMICONDUCTORS
DC8550S
TECHNICAL SPECIFICATIONS OF PNP EPITAXIAL PLANAR TRANSISTOR
Description
Designed for general purpose amplifier applications.
Pinning
1 = Emitter
2 = Base
3 = Collector
Absolute Maximum Ratings(TA=25oC)
Characteristic
Symbol Rating
Collector-Base Voltage
VCBO
-25
Collector-Emitter Voltage
VCEO
-20
Emitter-Base Voltage
VEBO
-5
Collector Current
IC -700
Total Power Dissipation
PD 625
Junction Temperature
TJ +150
Storage Temperature
TSTG -55 to +150
Unit
V
V
V
mA
mW
oC
oC
TO-92
.190(4.83)
.170(4.33)
.190(4.83)
.170(4.33)
.500
(12.70) Min
2o Typ
2o Typ
.050
(1.27)Typ
.022(0.56)
.014(0.36)
.100
(2.54)
Typ
.022(0.56)
.014(0.36)
321
.148(3.76)
.132(3.36)
.050
5oTyp. 5oTyp. (1.27)Typ
Dimensions in inches and (millimeters)
Electrical Characteristics
(Ratings at 25oC ambient temperature unless otherwise specified)
Characteristic
Symbol Min
Typ
Collector-Base Breakdown Volatge
BVCBO -25
-
Collector-Emitter Breakdown Voltage BVCEO -20
-
Emitter-Base Breakdown Volatge
BVEBO
-5
-
Collector Cutoff Current
Collector-Emitter Saturation Voltage(1)
Base-Emitter On Voltage(1)
ICBO
VCE(sat)
VBE(on)
-
-
-
-
-
-
DC Current Gain(1)
hFE1
hFE2
85
-
-
170
Transition Frequency
fT 150
-
Output Capacitance
Cob -
(1)Pulse Test: Pulse Width 380µs, Duty Cycle 2%
-
Max
-
-
-
-1
-0.6
-1
500
-
-
10
Unit
V
V
V
µA
V
V
-
-
MHz
pF
Test Conditions
IC=-10µA
IC=-1mA
IE=-10µA
VCB=-20V
IC=-0.5A, IB=-50mA
IC=-150mA, VCE=-1V
IC=-150mA, VCE=-1V
IC=-500mA, VCE=-1V
IC=-20mA, VCE=-10V, f=100MHz
VCB=-10V, f=1MHz
Classification of hFE1
Rank
B
C
Range
85~160
100~200
D
150~300
E
250~500
1 page | ||
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