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PDF BAS21J Data sheet ( Hoja de datos )

Número de pieza BAS21J
Descripción Single high-speed switching diode
Fabricantes NXP Semiconductors 
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BAS21J
Single high-speed switching diode
Rev. 01 — 8 March 2007
Product data sheet
1. Product profile
1.1 General description
Single high-speed switching diode, encapsulated in a SOD323F (SC-90) very small and
flat lead Surface-Mounted Device (SMD) plastic package.
1.2 Features
I High switching speed: trr 50 ns
I Low leakage current
I Repetitive peak reverse voltage:
VRRM 300 V
I Excellent coplanarity and improved
thermal behavior
I Low capacitance: Cd 2 pF
I Reverse voltage: VR 300 V
I Very small and flat lead SMD plastic
package
1.3 Applications
I High-speed switching
I General-purpose switching
I Voltage clamping
I Reverse polarity protection
1.4 Quick reference data
Table 1.
Symbol
IF
IR
VR
trr
Quick reference data
Parameter
forward current
reverse current
reverse voltage
reverse recovery time
Conditions
VR = 250 V
Min
[1] -
-
-
[2] -
Typ
-
-
-
-
[1] Pulse test: tp 300 µs; δ ≤ 0.02.
[2] When switched from IF = 30 mA to IR = 30 mA; RL = 100 ; measured at IR = 3 mA.
Max
250
150
300
50
Unit
mA
nA
V
ns

1 page




BAS21J pdf
NXP Semiconductors
BAS21J
Single high-speed switching diode
500
IF
(mA)
400
mhc618
300
200
100 (1) (2) (3)
0
0 0.5 1 VF (V) 1.5
(1) Tamb = 150 °C
(2) Tamb = 75 °C
(3) Tamb = 25 °C
Fig 1. Forward current as a function of forward
voltage; typical values
102
IR
(µA)
10
mhc619
1
101
102
0 40 80 120 160 200
Tj (°C)
VR = 250 V
Fig 3. Reverse current as a function of junction
temperature; typical values
102
IFSM
(A)
10
mbg703
1
101
1
10 102 103 104
tp (µs)
Based on square wave currents.
Tj = 25 °C; prior to surge
Fig 2. Non-repetitive peak forward current as a
function of pulse duration; maximum values
0.42
Cd
(pF)
mhc621
0.38
0.34
0.3
0
10 20 30 40
VR (V)
f = 1 MHz; Tamb = 25 °C
Fig 4. Diode capacitance as a function of reverse
voltage; typical values
BAS21J_1
Product data sheet
Rev. 01 — 8 March 2007
© NXP B.V. 2007. All rights reserved.
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