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PDF UPA814TF Data sheet ( Hoja de datos )
| Número de pieza | UPA814TF | |
| Descripción | NPN SILICON HIGH FREQUENCY TRANSISTOR | |
| Fabricantes | NEC | |
| Logotipo |  |
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NPN SILICON HIGH UPA814TF
FREQUENCY TRANSISTOR
FEATURES
• SMALL PACKAGE OUTLINE:
SOT-363 package measures just 2.0 mm x 1.25 mm
• LOW HEIGHT PROFILE:
Just 0.60 mm high
• HIGH COLLECTOR CURRENT:
IC MAX = 100 mA
DESCRIPTION
The UPA814TF contains two NE688 NPN high frequency
silicon bipolar chips. NEC's new low profile TF package is ideal
for all portable wireless applicatons where reducing compo-
nent height is a prime consideration. Each transistor chip is
independently mounted and easily configured for two stage
cascade LNAs and other similar applications.
ABSOLUTE MAXIMUM RATINGS1 (TA = 25°C)
SYMBOLS
PARAMETERS
UNITS RATINGS
VCBO Collector to Base Voltage
V
9
VCEO Collector to Emitter Voltage V
6
VEBO Emitter to Base Voltage
V
2
IC Collector Current
mA 100
PT Total Power Dissipation
1 Die
2 Die
mW
mW
110
200
TJ
TSTG
Junction Temperature
Storage Temperature
°C 150
°C -65 to +150
Note: 1.Operation in excess of any one of these parameters may
result in permanent damage.
OUTLINE DIMENSIONS (Units in mm)
PACKAGE OUTLINE TS06
(Top View)
2.1 ± 0.1
1.25 ± 0.1
0.65
2.0 ± 0.2
1.3
1
2
3
6
+0.10
0.22 - 0.05 (All Leads)
5
4
0.6 ± 0.1
0.45
PIN OUT
1. Collector Transistor 1
2. Base Transistor 2
3. Collector Transistor 2
4. Emitter Transistor 2
5. Emitter Transistor 1
6. Base Transistor 1
0.13 ±0.05
0 ~ 0.1
Note:
Pin 1 is the lower left most pin as
the package lettering is oriented
and read left to right.
ELECTRICAL CHARACTERISTICS (TA = 25°C)
PART NUMBER
PACKAGE OUTLINE
UPA814TF
TS06
SYMBOLS
PARAMETERS AND CONDITIONS
UNITS
MIN
TYP MAX
ICBO
Collector Cutoff Current at VCB = 5V, IE = 0
µA
0.1
IEBO Emitter Cutoff Current at VEB = 1 V, IC = 0
µA
0.1
hFE Forward Current Gain1 at VCE = 1 V, IC = 3 mA
80 110 160
fT Gain Bandwidth at VCE = 3 V, IC = 20 mA, f = 2 GHz
GHz
9.0
Cre Feedback Capacitance2 at VCB = 1 V, IE = 0, f = 1 MHz
pF
0.75 0.85
|S21E|2 Insertion Power Gain at VCE = 3 V, IC =20 mA, f = 2 GHz
dB
6.5
NF Noise Figure at VCE = 3 V, IC = 7 mA, f = 2 GHz
dB
1.5
hFE1/hFE2 hFE Ratio: hFE1 = Smaller Value of Q1, or Q2
hFE2 = Larger Value of Q1 or Q2
0.85
Notes: 1. Pulsed measurement, pulse width ≤ 350 µs, duty cycle ≤ 2 %.
2. The emitter terminal should be connected to the ground terminal of the 3 terminal capacitance bridge. For Tape and Reel version use
part number UPA814TF-T1, 3K per reel.
California Eastern Laboratories
EXCLUSIVE NORTH AMERICAN AGENT FOR
RF, MICROWAVE & OPTOELECTRONIC SEMICONDUCTORS
CALIFORNIA EASTERN LABORATORIES • Headquarters • 4590 Patrick Henry Drive • Santa Clara, CA 95054-1817 • (408) 988-3500 • Telex 34-6393 • FAX (408) 988-0279
24-Hour Fax-On-Demand: 800-390-3232 (U.S. and Canada only) • Internet: http://WWW.CEL.COM
DATA SUBJECT TO CHANGE WITHOUT NOTICE
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