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PDF MASW-004100-1193 Data sheet ( Hoja de datos )
| Número de pieza | MASW-004100-1193 | |
| Descripción | Monolithic PIN SP4T Diode Switch | |
| Fabricantes | Tyco Electronics | |
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Monolithic PIN SP4T Diode Switch
MASW-004100-1193
Rev. 2
Features
• Ultra Broad Bandwidth: 50MHz to 26GHz
• 0.9 Insertion Loss , 34dB Isolation at 20GHz
• 50nS Switching Speed
• Reliable, Fully Monolithic, Glass Encapsulated
Construction
Description
The MASW-004100-1193 is a SP4T series-shunt
broad band switch made with M/A-COM’s unique
HMICTM (Heterolithic Microwave Integrated Circuit)
process, US Patent 5,268,310. This process allows the
incorporation of silicon pedestals that form series and
shunt diodes or vias by imbedding them in a low loss,
low dispersion glass. This hybrid combination of silicon
and glass gives HMIC switches exceptional low loss
and remarkable high isolation through low millimeter-
wave frequencies.
Applications
These high performance switches are suitable for use
in multi-band ECM, radar, and instrumentation control
circuits where high isolation to insertion loss ratios are
required. With a standard +5V/-5V, TTL controlled PIN
diode driver, 50nS switching speeds are achieved.
Absolute Maximum Ratings
TAMB = +25°C ( Unless Otherwise Specified )
Parameter
Operating Temperature
Storage Temperature
RF C.W. Incident Power (± 20mA)
Bias Current ( Forward )
Applied Voltage ( Reverse )
Value
-65°C to +125°C
-65°C to +150°C
+33dBm
± 20mA
-25 Volts
Notes:
Exceeding these limits may cause permanent
damage.
J2
J3 J4
J5
J1
1
1 page  
Operation of the MASW-004100-1193 PIN Switch
Operation of the MASW-004100-1193 PIN switch is achieved by the simultaneous application of negative DC current
to the low loss port and positive DC current to the remaining isolated switching ports as shown in Figure 1. The
backside area of the die is the RF and DC return ground plane. The DC return is achieved on the common port, J1.
The DC control currents should be supplied by constant current source. The voltages at these points will not exceed
±1.5 volts (1.2 volts typical) for supply currents up to ±20 mA. In the low loss state, the series diode must be forward
biased and the shunt diode reverse biased. For all the isolated ports, the shunt diode is forward biased and the series
diode is reverse biased. The bias network design should yield > 30 dB RF to DC isolation.
Best insertion loss, P1dB, IP3, and switching speed are achieved by using a voltage pull-up resistor in the DC return
path, (J1 ). A minimum value of |-2V| is recommended at this return node, which is achievable with a standard,
±5V TTL controlled PIN diode driver. A typical DC bias schematic for 2-18 GHz Operation is shown in Figure 1.
2 – 18 GHz Bias Network
39 pF
100 Ω
22nH
J1
22 pF
DC Bias
39 pF
HMIC Switch Die
J5
J4 J3
Fig. 1
22nH
22 pF
J2
5
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet MASW-004100-1193.PDF ] | |
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