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PDF MAPRST1030-1KS Data sheet ( Hoja de datos )
| Número de pieza | MAPRST1030-1KS | |
| Descripción | Avionics Pulsed RF Power Transistor | |
| Fabricantes | Tyco Electronics | |
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Advanced Datasheet
Rev 17-06-2005
Avionics Pulsed RF Power Transistor
1000 Watts, 1030 MHz, 10µs Pulse Width, 1% Duty Cycle
MAPRST1030-1KS
Features
• NPN Silicon Microwave Power Transistor
• Common Base Configuration
• Broadband Class C Operation
• High Efficiency Interdigitated Geometry
• Diffused Emitter Ballasting Resistors
• Gold Metalization System
• Internal Input and Output Impedance Matching
• Hermetic Metal/Ceramic Package
Outline Drawing
MAXIMUM RATINGS AT 25°C
Parameter
Symbol
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current (Peak)
Total Power Dissipation @ +25°
C
Junction Temperature
Storage Temperature
VCES
VEBO
IC
PTOT
TJ
TSTG
Rating
65
3.0
250
11.6
200
-65 to +200
Units
V
V
A
kW
°C
°C
ELECTRICAL CHARACTERISTICS AT 25°C
Parameter
Symbol
Min
Collector-Emitter Breakdown Voltage
Collector-Emitter Leakage Current
Thermal Resistance
RF Power Gain
Collector Efficiency
Input Return Loss
Load Mismatch Stability
Load Mismatch Tolerance
BVCES
ICES
RTH
PG
ηC
RL
VSWR-S
VSWR-T
65
-
-
8.0
45
-
-
-
Max
-
30
0.015
-
-
-10
1.5:1
3:1
Units
V
mA
°C/W
dB
%
dB
-
-
Test Conditions
IC=250mA
VCE=50V
VCC=50 V, POUT=1000 W, F= 1.03 GHz
VCC=50 V, POUT=1000 W, F= 1.03 GHz
VCC=50 V, POUT=1000 W, F= 1.03 GHz
VCC=50 V, POUT=1000 W, F= 1.03 GHz
VCC=50 V, POUT=1000 W, F= 1.03 GHz
VCC=50 V, POUT=1000 W, F= 1.03 GHz
BROADBAND TEST FIXTURE IMPEDANCE
F (GHz)
1.03
Z IF (Ω)
1.8 - j2.2
Z OF (Ω)
0.5 - j1.0
M/A-COM RF Power Innovations • 1742 CRENSHAW BLVD • TORRANCE, CA 90501 • (310) 320-6160 • FAX (310) 618-9191
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