(PDF) MAPLST1820-060CF Datasheet - RF Power Field Effect Transistor

Número de pieza	MAPLST1820-060CF
Descripción	RF Power Field Effect Transistor
Fabricantes	Tyco Electronics
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No Preview Available ! RFwww.DataSheet4U.com Power Field Effect Transistor LDMOS, 1800 — 2000 MHz, 60W, 26V 5/24/04 Preliminary Features Package Style Designed for base station applications in the 1805-1880MHz or 1930-1990MHz Frequency Band. Suitable for GSM, EDGE, TDMA, CDMA, and multi-carrier amplifier applications Typical EDGE performance @ 1880MHz, 26V, Idq=900mA: Output Power: 30W Power Gain: 13dB (typ.) Efficiency: 35% (typ.) P-238 Maximum Ratings Drain—Source Voltage Parameter Gate—Source Voltage Total Power Dissipation @ TC = 25 °C Storage Temperature Junction Temperature Symbol VDSS VGS PD TSTG TJ Rating 65 +20, -20 206 -40 to +150 +200 Units Vdc Vdc W °C °C Thermal Characteristics Characteristic Thermal Resistance, Junction to Case Symbol RΘJC Max 0.85 Unit ºC/W NOTE—CAUTION—MOS devices are susceptible to damage from electrostatic charge. Precautions in handling and packaging MOS devices should be observed. 1 page

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PDF MAPLST1820-060CF Data sheet ( Hoja de datos )