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PDF MAPLST0822-002PP Data sheet ( Hoja de datos )
| Número de pieza | MAPLST0822-002PP | |
| Descripción | RF Power Field Effect Transistor | |
| Fabricantes | Tyco Electronics | |
| Logotipo |  |
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RFwww.DataSheet4U.com Power Field Effect Transistor
LDMOS, 800—2200 MHz, 2W, 28V
4/14/05
Preliminary
Features
Package Style
Designed for broadband commercial
applications up to 2.2GHz
High Gain, High Efficiency and High
Linearity
Ease of Design for Gain and Insertion Phase
Flatness
Excellent Thermal Stability
W-CDMA Performance at 2.17GHz, 28Vdc
Average Output Power: 28dBm @ -39dBc
ACPR
Gain: 14.5dB (typ.)
Efficiency: 23% (typ.)
10:1 VSWR Ruggedness at 2W (CW), 28V,
2.11GHz
Performance at 960MHz, 26Vdc, P1dB
Average Output Power: 2W min.
Gain: 20dB (typ.)
Efficiency: 50% (typ.)
10:1 VSWR Ruggedness at 2W, 26V,
960MHz
Maximum Ratings
Drain—Source Voltage
Parameter
Gate—Source Voltage
Total Power Dissipation @ TC = 25 °C
Storage Temperature
Junction Temperature
PFP-16
Symbol
VDSS
VGS
PD
TSTG
TJ
Rating
65
+15, -0.5
6.9
-65 to +150
150
Thermal Characteristics
Characteristic
Thermal Resistance, Junction to Case
Symbol
RΘJC
Max
18
Units
Vdc
Vdc
W
°C
°C
Unit
ºC/W
NOTE—CAUTION—MOS devices are susceptible to damage from electrostatic charge. Precautions in handling and packag-
ing MOS devices should be observed.
1 page  
RF Power LDMOS Transistor, 800-2200 MHz, 2W, 28V
MAPLST0822-002PP
4/14/05
Preliminary
16
1905MHz, 26VDC, IDQ=35mA
50
45
15 40
35
14 30
25
13 20
15
12 10
Gain
Efficiency
5
11 0
15.0 20.0 22.0 24.0 26.0 28.0 30.0 31.0 32.0 32.5 33.0 33.5
POUT(dBm- Avg.)
Graph 5. PHS Power Gain and Drain Efficiency vs. Output Power
POUT(dBm- Avg.)
20 21 22 23 24 25 26 27 28 29 30
-50
1905MHz, 26VDC, IDQ=35mA
-55
ACPR (600kHz offset)
-60 ACPR (900kHz offset)
-65
-70
-75
-80
-85
Graph 6. PHS ACPR vs. Output Power
5
5 Page | ||
| Páginas | Total 10 Páginas | |
| PDF Descargar | [ Datasheet MAPLST0822-002PP.PDF ] | |
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