(PDF) MAPLST0810-090CF Datasheet - RF Power Field Effect Transistor

Número de pieza	MAPLST0810-090CF
Descripción	RF Power Field Effect Transistor
Fabricantes	Tyco Electronics
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No Preview Available ! RFwww.DataSheet4U.com Power Field Effect Transistor LDMOS, 865 — 960 MHz, 90W, 26V 5/14/04 Preliminary Features Package Style Q Designed for 865 to 960 MHz Broadband Commercial and Base Station Applications. Q Typical CW RF Performance at 960MHz, 26VDC: Q POUT: 90W (P1dB) Q Gain: 18dB Q Efficiency: 50% Q Ruggedness: 10:1 VSWR @ 90W CW, 26V, 900MHz Q High Gain, High Efficiency and High Linearity Q Internal Input Match Q Excellent Thermal Stability P-238 Maximum Ratings Parameter Drain—Source Voltage Gate—Source Voltage Total Power Dissipation @ TC = 25 °C Storage Temperature Junction Temperature Thermal Characteristics Characteristic Thermal Resistance, Junction to Case Symbol VDSS VGS PD TSTG TJ Rating 65 20 206 -40 to +150 +200 Units Vdc Vdc W °C °C Symbol RΘJC Max 0.85 Unit ºC/W NOTE—CAUTION—MOS devices are susceptible to damage from electrostatic charge. Precautions in handling and packag- ing MOS devices should be observed. 1 page

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PDF MAPLST0810-090CF Data sheet ( Hoja de datos )