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PDF MAAPGM0063-DIE Data sheet ( Hoja de datos )
| Número de pieza | MAAPGM0063-DIE | |
| Descripción | Amplifier | |
| Fabricantes | Tyco Electronics | |
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8.5-11.0 GHZ, 5W Power Amplifier
Features
♦ 5 Watt Saturated Output Power Level
♦ MSAG™ Process
♦ Proven Manufacturability and Reliability
No Airbridges
Polyimide Scratch Protection
No Hydrogen Poisoning Susceptibility
Description
The MAAPGM0063-Die is a 3-stage power amplifier with on-chip
bias networks. This product is fully matched to 50 ohms on both
the input and output. It can be used as a power amplifier stage or
as a driver stage in high power applications.
Fabricated using M/A-COM’s repeatable, high performance and
highly reliable GaAs Multifunction Self-Aligned Gate MESFET
Process, each device is 100% RF tested on wafer to ensure
performance compliance.
M/A-COM’s MSAG™ process features robust silicon-like manu-
facturing processes, planar processing of ion implanted transis-
tors, multiple implant capability enabling power, low-noise, switch
and digital FETs on a single chip, and polyimide scratch protec-
tion for ease of use with automated manufacturing processes.
The use of refractory metals and the absence of platinum in the
gate metal formulation prevents hydrogen poisoning when em-
ployed in hermetic packaging.
MAAPGM0063-DIE
RO-P-DS-3094
Preliminary Datasheet
Primary Applications
♦ Military Radar
♦ Weather Radar
Electrical Characteristics: TB = 40°C1, Z0 = 50Ω, VDD = 10V, IDQ = 1.4 A2, Pin = 16 dBm
Parameter
Bandwidth
Symbol
f
Typical
8.5-11.0
Units
GHz
Output Power
Power Added Efficiency
POUT
PAE
37
32
dBm
%
1-dB Compression Point
P1dB
36
dBm
Small Signal Gain G 25
dB
Input VSWR
VSWR
2.5:1
Output VSWR
VSWR
2.3:1
Gate Supply Current
Drain Supply Current
IGG
IDD
< 20
< 2.0
mA
A
1. TB = MMIC Base Temperature
2. Adjust VGG between –2.4 and –1.5V to achieve IDQ indicated.
1
M/A-COM Inc. and its affiliates reserve the right to make changes to the
product(s) or information contained herein without notice. M/A-COM makes
no warranty, representation or guarantee regarding the suitability of its
products for any particular purpose, nor does M/A-COM assume any liability
whatsoever arising out of the use or application of any product(s) or
information.
• North America Tel: 800.366.2266 / Fax: 978.366.2266
• Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300
• Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298
Visit www.macom.com for additional data sheets and product information.
1 page  
8.5-11.0 GHZ, 5W Power Amplifier
0.1 μF
0.1 μF
200 pF
200 pF
MAAPGM0063-DIE
RO-P-DS-3094
Preliminary Datasheet
0.1 μF
VDD
200 pF
RFIN
GN D: G
GN D: G
GN D: G
GN D: G
GN D: G
RFO UTG DN :G
GN D: G
G DN :G
GN D: G
200 pF
200 pF
VGG
0.1 μF
0.1 μF
200 pF
0.1 μF
VDD
Figure 8. Recommended bonding diagram for pedestal mount.
Support circuitry typical of MMIC characterization fixture for CW test-
Assembly Instructions:
Die attach: Use AuSn (80/20) 1-2 mil. preform solder. Limit time @ 300 °C to less than 5 minutes.
Wirebonding: Bond @ 160 °C using standard ball or thermal compression wedge bond techniques.
For DC pad connections, use either ball or wedge bonds. For best RF performance, use wedge
bonds of shortest length, although ball bonds are also acceptable.
Biasing Note: Must apply negative bias to VGG before applying positive bias to VDD to prevent
damage to amplifier.
5
M/A-COM Inc. and its affiliates reserve the right to make changes to the
product(s) or information contained herein without notice. M/A-COM makes
no warranty, representation or guarantee regarding the suitability of its
products for any particular purpose, nor does M/A-COM assume any liability
whatsoever arising out of the use or application of any product(s) or
information.
• North America Tel: 800.366.2266 / Fax: 978.366.2266
• Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300
• Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298
Visit www.macom.com for additional data sheets and product information.
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