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PDF MAAPGM0062-DIE Data sheet ( Hoja de datos )
| Número de pieza | MAAPGM0062-DIE | |
| Descripción | Amplifier | |
| Fabricantes | Tyco Electronics | |
| Logotipo |  |
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9.5-12.0 GHZ, 4W Power Amplifier
Features
♦ 4 Watt Saturated Output Power Level
♦ MSAG™ Process
♦ Proven Manufacturability and Reliability
No Airbridges
Polyimide Scratch Protection
No Hydrogen Poisoning Susceptibility
Description
The MAAPGM0062-Die is a 3-stage power amplifier with on-
chip bias networks. This product is fully matched to 50 ohms on
both the input and output. It can be used as a power amplifier
stage or as a driver stage in high power applications.
Fabricated using M/A-COM’s repeatable, high performance and
highly reliable GaAs Multifunction Self-Aligned Gate MESFET
Process, each device is 100% RF tested on wafer to ensure
performance compliance.
M/A-COM’s MSAG™ process features robust silicon-like manu-
facturing processes, planar processing of ion implanted transis-
tors, multiple implant capability enabling power, low-noise,
switch and digital FETs on a single chip, and polyimide scratch
protection for ease of use with automated manufacturing proc-
esses. The use of refractory metals and the absence of plati-
num in the gate metal formulation prevents hydrogen poisoning
when employed in hermetic packaging.
MAAPGM0062 –DIE
RO-P-DS-3095 --
Preliminary Datasheet
Primary Applications
♦ Point-to-Point
♦ Radar
Electrical Characteristics: TB = 40°C1, Z0 = 50Ω, VDD = 10V, IDQ = 0.9 A, Pin = 18 dBm
Parameter
Symbol
Typical
Bandwidth
f 9.5-12.0
Units
GHz
Output Power
Power Added Efficiency
1-dB Compression Point
Small Signal Gain
POUT
PAE
P1dB
G
Input VSWR
VSWR
Output VSWR
VSWR
Gate Supply Current
Drain Supply Current
IGG
IDD
1. TB = MMIC Base Temperature
1
M/A-COM Inc. and its affiliates reserve the right to make changes to the
product(s) or information contained herein without notice. M/A-COM makes
no warranty, representation or guarantee regarding the suitability of its
products for any particular purpose, nor does M/A-COM assume any liability
whatsoever arising out of the use or application of any product(s) or
information.
36
33
35
23
1.6:1
1.8:1
< 20
< 1.5
dBm
%
dBm
dB
mA
A
• North America Tel: 800.366.2266 / Fax: 978.366.2266
• Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300
• Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298
Visit www.macom.com for additional data sheets and product information.
1 page  
9.5-12.0 GHZ, 4W Power Amplifier
MAAPGM0062 –DIE
RO-P-DS-3095 --
Preliminary Datasheet
Figure 8. Recommended bonding diagram for pedestal mount.
Assembly Instructions:
Die attach: Use AuSn (80/20) 1-2 mil. preform solder. Limit time @ 300 °C to less than 5 minutes.
Wirebonding: Bond @ 160 °C using standard ball or thermal compression wedge bond techniques.
For DC pad connections, use either ball or wedge bonds. For best RF performance, use wedge
bonds of shortest length, although ball bonds are also acceptable.
Biasing Note: Must apply negative bias to VGG before applying positive bias to VDD to prevent
damage to amplifier.
5
M/A-COM Inc. and its affiliates reserve the right to make changes to the
product(s) or information contained herein without notice. M/A-COM makes
no warranty, representation or guarantee regarding the suitability of its
products for any particular purpose, nor does M/A-COM assume any liability
whatsoever arising out of the use or application of any product(s) or
information.
• North America Tel: 800.366.2266 / Fax: 978.366.2266
• Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300
• Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298
Visit www.macom.com for additional data sheets and product information.
5 Page | ||
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