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PDF MAAPGM0057-DIE Data sheet ( Hoja de datos )
| Número de pieza | MAAPGM0057-DIE | |
| Descripción | Amplifier | |
| Fabricantes | Tyco Electronics | |
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2.0-13.0 GHz 1.2 W Power Amplifier
MAAPGM0057-DIE
RO-P-DS-3089 A
Preliminary Information
Features
♦ 1.2 Watt Saturated Output Power Level
♦ Variable Drain Voltage (4-10V) Operation
♦ MSAG™ Process
♦ Proven Manufacturability and Reliability
No Airbridges
Polyimide Scratch Protection
No Hydrogen Poisoning Susceptibility
Description
The MAAPGM0057-Die is a single-stage distributed power amplifier with
an on chip bias network. This product is fully matched to 50 ohms on
both the input and output. It can be used as a power amplifier stage or as
a driver stage in high power applications.
Fabricated using M/A-COM’s repeatable, high performance and highly
reliable GaAs Multifunction Self-Aligned Gate MESFET Process, each
device is 100% RF tested on wafer to ensure performance compliance.
M/A-COM’s MSAG™ process features robust silicon-like manufacturing
processes, planar processing of ion implanted transistors, multiple im-
plant capability enabling power, low-noise, switch and digital FETs on a
single chip, and polyimide scratch protection for ease of use with auto-
mated manufacturing processes. The use of refractory metals and the
absence of platinum in the gate metal formulation prevents hydrogen
poisoning when employed in hermetic packaging.
Primary Applications
♦ SatCom
♦ Test Instrumentation
♦ Military EW/ECM
♦ UltraWideband (UWB)
♦ Point-to-Point
Electrical Characteristics: TB = 40°C1, Z0 = 50Ω, VDD = 10V, IDQ ≈ 510 mA2, Pin = 25 dBm
Parameter
Symbol
Typical
Units
Bandwidth
f
2.0-13.0
GHz
Output Power
POUT
31
dBm
1-dB Compression Point
P1dB
30
dBm
Small Signal Gain
G
7 dB
Input VSWR
VSWR
2.2:1
Output VSWR
VSWR
2.2:1
Gate Supply Current
Drain Supply Current
Noise Figure
IGG
IDD
NF
< 5.0
< 900
8
mA
mA
dB
1. TB = MMIC Base Temperature
2. Adjust VGG between –2.5 to –1.4 V.
1
M/A-COM Inc. and its affiliates reserve the right to make changes to the
product(s) or information contained herein without notice. M/A-COM makes
no warranty, representation or guarantee regarding the suitability of its
products for any particular purpose, nor does M/A-COM assume any liability
whatsoever arising out of the use or application of any product(s) or
information.
• North America Tel: 800.366.2266 / Fax: 978.366.2266
• Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300
• Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298
Visit www.macom.com for additional data sheets and product information.
1 page  
2.0-13.0 GHz 1.2 W Power Amplifier
MAAPGM0057-DIE
RO-P-DS-3089 A
Preliminary Information
Mechanical Information
Chip Size: 4.46 x 4.46 x 0.075 mm (176 x 176 x 3 mils)
4.246mm.
VDVD
GND :G
VGTVG_T
4.461mm.
4.284mm.
GND: G
GND:G
GND: G
GND: G
GND: G
GND: G
GND: G
GND: G
GN D:G
GN D:G
GN D:G
GN D:G
GN D:G
GN D:G
GND: G
GN D:G
GND: G
GND: G
GND:G
GND:G
2.230mm.
GND :G
IN
GND:G
GND :G
OUT 2.230mm.
GND:G
GND:G
GND: G
GND: G
GND: G
GND: G
GND: G
GND: G
GND: G
GN D:G
GN D:G
GN D:G
GN D:G
GN D:G
GN D:G
GN D:G
GND: G
GND: G
GND: G
GND:G
GND:G
0.214mm.
0
0
VGBVG_B
GND: G
Figure 12. Die Layout
Chip edge to bond pad dimensions are shown to the center of the bond pad.
Bond Pad Dimensions
Pad
RF In and Out
Gate Supply Voltage VGT
Gate Supply Voltage VGB
Drain Supply Voltage VDD
Size (μm)
100 x 150
100 x 100
150 x 150
150 x 150
Size (mils)
4x6
4x4
6x6
6x6
5
M/A-COM Inc. and its affiliates reserve the right to make changes to the
product(s) or information contained herein without notice. M/A-COM makes
no warranty, representation or guarantee regarding the suitability of its
products for any particular purpose, nor does M/A-COM assume any liability
whatsoever arising out of the use or application of any product(s) or
information.
• North America Tel: 800.366.2266 / Fax: 978.366.2266
• Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300
• Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298
Visit www.macom.com for additional data sheets and product information.
5 Page | ||
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