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PDF MAAPGM0052-DIE Data sheet ( Hoja de datos )
| Número de pieza | MAAPGM0052-DIE | |
| Descripción | Amplifier | |
| Fabricantes | Tyco Electronics | |
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Amplifier, Distributed Power
4.0—18.0 GHz
Features
♦ 0.5 Watt Saturated Output Power Level
♦ Variable Drain Voltage (5-10V) Operation
♦ GaAs MSAG™ Process
♦ Proven Manufacturability and Reliability
No Airbridges
Polyimide Scratch Protection
No Hydrogen Poisoning Susceptibility
Description
The MAAPGM0052-Die is a 2-stage distributed power amplifier with
on-chip bias networks. This product is fully matched to 50 ohms on
both the input and output. It can be used as a power amplifier stage
or as a driver stage in high power applications.
MAAPGM0052-DIE
903210 —
Preliminary Information
Fabricated using M/A-COM’s repeatable, high performance and
highly reliable GaAs Multifunction Self-Aligned Gate (MSAG™)
Process, each device is 100% RF tested on wafer to ensure
performance compliance.
Primary Applications
M/A-COM’s MSAG™ process features robust silicon-like manufac-
turing processes, planar processing of ion implanted transistors,
multiple implant capability enabling power, low-noise, switch and
digital FETs on a single chip, and polyimide scratch protection for
ease of use with automated manufacturing processes. The use of
refractory metals and the absence of platinum in the gate metal
formulation prevents hydrogen poisoning when employed in her-
metic packaging.
Electrical Characteristics: TB = 40°C1, Z0 = 50Ω, VDD = 8V, IDQ ≈ 500 mA2, Pin = 17 dBm, Rg ≈ 100Ω
Parameter
Symbol
Typical
Units
Bandwidth
f 4.0-18.0 GHz
Output Power
POUT
26.0
dBm
1dB Compression Point
P1dB
25
dBm
Small Signal Gain
G
13
dB
Noise Figure
NF
6.0
dB
Input VSWR
VSWR
1.4:1
Output VSWR
VSWR
1.5:1
Gate Supply Current
IGG
4
mA
Drain Supply Current
IDD
600
mA
1. TB = MMIC Base Temperature
2. Adjust VGG between –2.4 and –1.0V to achieve IDQ indicated.
1
M/A-COM Inc. and its affiliates reserve the right to make changes to the
product(s) or information contained herein without notice. M/A-COM makes
no warranty, representation or guarantee regarding the suitability of its
products for any particular purpose, nor does M/A-COM assume any liability
whatsoever arising out of the use or application of any product(s) or
information.
• North America Tel: 800.366.2266 / Fax: 978.366.2266
• Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300
• Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298
Visit www.macom.com for additional data sheets and product information.
1 page  
Amplifier, Distributed Power
4.0—18.0 GHz
Mechanical Information
Chip Size: 3.000 x 3.000 x 0.075 mm (118 x 118 x 3 mils)
MAAPGM0052-DIE
903210 —
Preliminary Information
2.838mm
VD
GND:G
GND:G
3.000mmm
GND:G
OUT
GND:G
2.268mm
.0467mm
0
GND:G
IN
GND:G
0
VG_B GND:G
Figure 8. Die Layout
Chip edge to bond pad dimensions are shown to the center of the bond pad.
Bond Pad Dimensions
Pad
RF In and Out
DC Drain Supply Voltage VDD
DC Gate Supply Voltage VG_B
Size (μm)
100 x 150
150 x 150
150 x 150
Size (mils)
4x6
6x6
6x6
5
M/A-COM Inc. and its affiliates reserve the right to make changes to the
product(s) or information contained herein without notice. M/A-COM makes
no warranty, representation or guarantee regarding the suitability of its
products for any particular purpose, nor does M/A-COM assume any liability
whatsoever arising out of the use or application of any product(s) or
information.
5
• North America Tel: 800.366.2266 / Fax: 978.366.2266
• Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300
• Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298
Visit www.macom.com for additional data sheets and product information.
5 Page | ||
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