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PDF MAAPGM0030-DIE Data sheet ( Hoja de datos )
| Número de pieza | MAAPGM0030-DIE | |
| Descripción | Power Amplifier | |
| Fabricantes | Tyco Electronics | |
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5.0-9.0 GHz 1W Power Amplifier
RO-P-DS-3021 A
Preliminary Information
MAAPGM0030-DIE
Features
♦ 1 Watt Saturated Output Power Level
♦ Variable Drain Voltage (4-10V) Operation
♦ GaAs MSAG® Process
♦ Proven Manufacturability and Reliability
No Airbridges
Polyimide Scratch Protection
No Hydrogen Poisoning Susceptibility
Description
The MAAPGM0030-Die is a 2-stage power amplifier with on-chip bias
networks. This product is fully matched to 50 ohms on both the input and
output. It can be used as a power amplifier stage or as a driver stage in
high power applications.
Fabricated using M/A-COM’s repeatable, high performance and highly
reliable GaAs Multifunction Self-Aligned Gate (MSAG®) MESFET
Process, each device is 100% RF tested on wafer to ensure
performance compliance.
M/A-COM’s MSAG process features robust silicon-like manufacturing
processes, planar processing of ion implanted transistors, multiple im-
plant capability enabling power, low-noise, switch and digital FETs on a
single chip, and polyimide scratch protection for ease of use with auto-
mated manufacturing processes. The use of refractory metals and the
absence of platinum in the gate metal formulation prevents hydrogen
poisoning when employed in hermetic packaging.
Primary Applications
♦ Multiple Band Point-to-Point Radio
♦ SatCom
♦ ISM Band
Electrical Characteristics: TB = 40°C1, Z0 = 50Ω, VDD = 8V, IDQ ≈ 240 mA2, Pin = 18 dBm
Parameter
Symbol
Typical
Units
Bandwidth
f
5.0-9.0
GHz
Output Power
Power Added Efficiency
POUT
PAE
30
35
dBm
%
1-dB Compression Point
P1dB
29
dBm
Small Signal Gain
G
17
dB
Input VSWR
VSWR
1.4:1
Output VSWR
VSWR
1.8:1
Gate Supply Current
Drain Supply Current
Output Third Order Intercept
3rd Order Intermodulation Distortion
Single Carrier Level = 20 dBm
5th Order Intermodulation Distortion
Single Carrier Level = 20 dBm
Noise Figure
2nd Harmonic
3rd Harmonic
IGG
IDD
OTOI
IM3
IM5
NF
2f
3f
<4
< 400
38
-14
-33
8
-20
-35
mA
mA
dBm
dBm
dBm
dB
dBc
dBc
1. TB = MMIC Base Temperature
2. Adjust VGG between –2.4 and –1.5V to achieve IDQ indicated.
1 page  
5.0-9.0 GHz 1W Power Amplifier
RO-P-DS-3021 A 5/6
MAAPGM0030-DIE
Mechanical Information
Chip Size: 2.480 x 1.98 x 0.075 mm (98 x 78 x 3 mils)
1.980 mm
0.980 mm
VDD
0.990 mm
0.126mm.
0
0
VGG
Figure 5. Die Layout
Chip edge to bond pad dimensions are shown to the center of the bond pad.
Bond Pad Dimensions
Pad
RF In and Out
DC Drain Supply Voltage VDD
DC Gate Supply Voltage VGG
Size (µm)
100 x 200
200 x 150
150 x 150
Size (mils)
4x8
8x6
4x6
Specifications subject to change without notice.
Email: [email protected]
North America: Tel. (800) 366-2266
Asia/Pacific: Tel.+81-44-844-8296, Fax +81-44-844-8298
Europe: Tel. +44 (1908) 574 200, Fax+44 (1908) 574 300
5
Visit www.macom.com for additional data sheets and product information.
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| PDF Descargar | [ Datasheet MAAPGM0030-DIE.PDF ] | |
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