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PDF MAAPGM0027-DIE Data sheet ( Hoja de datos )
| Número de pieza | MAAPGM0027-DIE | |
| Descripción | Power Amplifier | |
| Fabricantes | Tyco Electronics | |
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2.0-4.0 GHz 1W Power Amplifier
Features
♦ 1 Watt Saturated Output Power Level
♦ Variable Drain Voltage (4-10V) Operation
♦ MSAG™ MESFET Process
♦ Proven Manufacturability and Reliability
No Airbridges
Polyimide Scratch Protection
No Hydrogen Poisoning Susceptibility
Description
The MAAPGM0027-Die is a 2-stage power amplifier with on-chip bias
networks. This product is fully matched to 50 ohms on both the input
and output. It can be used as a power amplifier stage or as a driver
stage in high power applications.
MAAPGM0027-DIE
RO-P-DS-3014 B
Preliminary Information
Fabricated using M/A-COM’s repeatable, high performance and highly
reliable GaAs Multifunction Self-Aligned Gate MESFET Process, each
device is 100% RF tested on wafer to ensure performance compliance.
M/A-COM’s MSAG™ process features robust silicon-like manufactur-
ing processes, planar processing of ion implanted transistors, multiple
implant capability enabling power, low-noise, switch and digital FETs
on a single chip, and polyimide scratch protection for ease of use with
automated manufacturing processes. The use of refractory metals and
the absence of platinum in the gate metal formulation prevents hydro-
gen poisoning when employed in hermetic packaging.
Primary Applications
♦ Wireless Local Loop 3.4-3.6 GHz
♦ MMDS 2.5-2.7 GHz
♦ Radar
Electrical Characteristics: TB = 40°C1, Z0 = 50 Ω, VDD = 8V, IDQ ≈ 230mA2, Pin = 10 dBm
Parameter
Symbol
Typical
Units
Bandwidth
f 2.0-4.0
GHz
Output Power
POUT
30
dBm
Power Added Efficiency
PAE
35
%
1-dB Compression Point
P1dB
29
dBm
Small Signal Gain
G 22
dB
Input VSWR
VSWR
1.8:1
Output VSWR
VSWR
1.4:1
Gate Supply Current
Drain Supply Current
Output Third Order Intercept
IGG
IDD
OTOI
<2
< 350
37
mA
mA
dBm
3rd Order Intermodulation Distortion
Single Carrier Level = 21 dBm
IM3
-15
dBm
5th Order Intermodulation Distortion
Single Carrier Level = 21 dBm
IM5
-39
dBm
Noise Figure
NF 6
dB
2nd Harmonic
2f -15 dBc
3rd Harmonic
3f -25 dBc
1. TB = MMIC Base Temperature
1 2. Adjust VGG between –2.4 and –1.5V to achieve indicated IDQ .
M/A-COM Inc. and its affiliates reserve the right to make changes to the
• North America Tel: 800.366.2266 / Fax: 978.366.2266
product(s) or information contained herein without notice. M/A-COM makes
no warranty, representation or guarantee regarding the suitability of its
products for any particular purpose, nor does M/A-COM assume any liability
• Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300
• Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298
whatsoever arising out of the use or application of any product(s) or
information.
Visit www.macom.com for additional data sheets and product information.
1 page  
2.0-4.0 GHz 1W Power Amplifier
MAAPGM0027-DIE
RO-P-DS-3014 B
Preliminary Information
Mechanical Information
Chip Size: 2.980 x 1.580 x 0.075 mm (117 x 62 x 3 mils)
1.580 mm.
1.378 mm.
0.840 mm.
0.202 mm.
0
0
0.840 mm.
Figure 5. Die
Chip edge to bond pad dimensions are shown to the center of the bond pad.
Bond Pad Dimensions
Pad
RF In and Out
DC Drain Supply Voltage VDD
DC Gate Supply Voltage VGG
Size (μm)
100 x 200
200 x 150
150 x 150
Size (mils)
4x8
8x6
6x6
5
M/A-COM Inc. and its affiliates reserve the right to make changes to the
product(s) or information contained herein without notice. M/A-COM makes
no warranty, representation or guarantee regarding the suitability of its
products for any particular purpose, nor does M/A-COM assume any liability
whatsoever arising out of the use or application of any product(s) or
information.
• North America Tel: 800.366.2266 / Fax: 978.366.2266
• Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300
• Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298
Visit www.macom.com for additional data sheets and product information.
5 Page | ||
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