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PDF MAAMGM0007-DIE Data sheet ( Hoja de datos )
| Número de pieza | MAAMGM0007-DIE | |
| Descripción | Distributed Amp/Gain Block | |
| Fabricantes | Tyco Electronics | |
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2.0-18.0 GHz Distributed Amp/Gain Block
Preliminary Datasheet
RO-P-DS-3084 A
MAAMGM0007-DIE
Features
♦ 0.15 Watt Saturated Output Power Level
♦ Single Bias Operation
♦ Variable Drain Voltage (4-6V) Operation
♦ GaAs MSAG™ Process
♦ Proven Manufacturability and Reliability
No Airbridges
Polyimide Scratch Protection
No Hydrogen Poisoning Susceptibility
Description
The MAAMGM0007-Die is a single stage distributed amplifier
with single bias operation. This product is fully matched to 50
ohms on both the input and output. It can be used as a driver
stage in high power applications.
Fabricated using M/A-COM’s repeatable, high performance and
highly reliable GaAs Multifunction Self-Aligned Gate MESFET
Process, each device is 100% RF tested on wafer to ensure
performance compliance.
M/A-COM’s MSAG™ process features robust silicon-like manu-
facturing processes, planar processing of ion implanted transis-
tors, multiple implant capability enabling power, low-noise, switch
and digital FETs on a single chip, and polyimide scratch protec-
tion for ease of use with automated manufacturing processes.
The use of refractory metals and the absence of platinum in the
gate metal formulation prevents hydrogen poisoning when em-
ployed in hermetic packaging.
Primary Applications
♦ Test Equipment
♦ Electronic Warfare
♦ Radar
Electrical Characteristics: TB = 40°C1, Z0 = 50Ω, VDD = 5V, Pin = 16 dBm
Parameter
Symbol
Typical
Bandwidth
f 2.0-18.0
Output Power
1-dB Compression Point
Small Signal Gain
POUT
P1dB
G
22
19
8
Noise Figure
NF
6
Input VSWR
VSWR
2.0:1
Output VSWR
VSWR
2.0:1
Drain Supply Current
IDD
< 250
1. TB = MMIC Base Temperature
Units
GHz
dBm
dBm
dB
dB
mA
1 page  
2.0-18.0 GHz Distributed Amp/Gain Block
RO-P-DS-3084 A 5/6
MAAMGM0007-DIE
Mechanical Information
Chip Size: 1.67 x 3.00 x 0.075 mm (65 x 118 x 3 mils)
1.503mm
0.367mm
0
GND:G
IN
GND:G
0
VD_5
VD_6 VD_7 VD_8
GND:G
GND:G
G ND:G
GND:G
GND:G
GND:G
GND:G
GND:G
GND:G
1.665mm
1.558mm
GND:G
OUT
GND:G
0.907mm
Figure 8. Die Layout
Chip edge to bond pad dimensions are shown to the center of the bond pad.
Bond Pad Dimensions
Pad
RF In and Out
5 Volt Supply: VD_5
6 Volt Supply: VD_6
7 Volt Supply: VD_7
8 Volt Supply: VD_8
Size (µm)
150 x 150
150 x 150
100 x 100
100 x 100
100 x 100
Size (mils)
6x6
6x6
4x4
4x4
4x4
Specifications subject to change without notice.
Email: [email protected]
North America: Tel. (800) 366-2266
Asia/Pacific: Tel.+81-44-844-8296, Fax +81-44-844-8298
5
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| PDF Descargar | [ Datasheet MAAMGM0007-DIE.PDF ] | |
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