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PDF MAAMGM0002-DIE Data sheet ( Hoja de datos )
| Número de pieza | MAAMGM0002-DIE | |
| Descripción | Amplifier | |
| Fabricantes | Tyco Electronics | |
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RoHS
Compliant
Amplifier, Distributed, 0.1W
1.0-18.0 GHz
Features
♦ 0.1 Watt Saturated Output Power Level
♦ 4 dB Typical Noise Figure
♦ Select-at-Test Biasing
♦ MSAG™ Process
MAAMGM0002-DIE
Rev E
Description
The MAAMGM0002-Die is a 0.1W Distributed Amplifier with on-chip
bias networks. This product is fully matched to 50 ohms on both the
input and output. The MMIC can be used as a broadband amplifier
stage or as a driver stage in high power applications.
Each device is 100% RF tested to ensure performance compliance.
The part is fabricated using M/A-COM’s GaAs Multifunction Self-
Aligned Gate Process.
M/A-COM’s MSAG™ process features robust silicon-like manufac-
turing processes, planar processing of ion implanted transistors, mul-
tiple implant capability enabling power, low-noise, switch and digital
FETs on a single chip, and polyimide scratch protection for ease of
use with automated manufacturing processes. The use of refractory
metals and the absence of platinum in the gate metal formulation
prevents hydrogen poisoning when employed in hermetic packaging.
Primary Applications
♦ Test Equipment
♦ Electronic Warfare
♦ Radar
Also Available in:
Description
Part Number
Ceramic Package
MAAMGM0002
SAMPLES
Sample Board (Die)
MAAMGM0002-DIE-SMB
Sample Board (Packaged)
MAAMGM0002-SMB
Electrical Characteristics: TB = 40°C1, Z0 = 50Ω, VDD = 5V, IDQ = 75 mA2, Pin = 13 dBm
Parameter
Symbol
Minimum
Typical
Maximum
Units
Bandwidth
f 1.0
18.0 GHz
Output Power
Power Added Efficiency
POUT
PAE
19.5 21
12
dBm
%
1-dB Compression Point
P1dB
20 dBm
Small Signal Gain
G
79
dB
Noise Figure
NF
4 dB
Output TOI
OTOI
31 dBm
Input VSWR
f = 2 GHz
VSWR
1.7:1
2:1
Output VSWR
f = 2 GHz
VSWR
1.7:1
2:1
Gate Current
Drain Current
IGG
IDD
<2
100 150
mA
mA
1. TB = MMIC Base Temperature
1 2. Adjust VGG between –1.0 and –0.3 V to achieve IDQ indicated.
M/A-COM Inc. and its affiliates reserve the right to make changes to the
product(s) or information contained herein without notice. M/A-COM makes
no warranty, representation or guarantee regarding the suitability of its
products for any particular purpose, nor does M/A-COM assume any liability
whatsoever arising out of the use or application of any product(s) or
information.
• North America Tel: 800.366.2266 / Fax: 978.366.2266
• Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300
• Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298
Visit www.macom.com for additional data sheets and product information.
1 page  
Amplifier, Distributed, 0.1W
1.0-18.0 GHz
RoHS
Compliant
100 pF
0.1 μF
VDD
VDD
RFIN
MAAMGM0002-DIE
Rev E
RFOUT
VGG
HI MID LO VGG GND
100 pF
0.1 μF
Wirebond required to
reference on-chip Se-
lect-at-Test bias net-
work.
Figure 5a. Required Bonding for Select-at-Test Gate Bias Configuration. Support
circuitry typical of MMIC characterization fixture for CW testing.
Pad
HI
MID
LO
Applied Voltage (V)
-5
-5
-5
% IDSS
50
35
25
5
M/A-COM Inc. and its affiliates reserve the right to make changes to the
product(s) or information contained herein without notice. M/A-COM makes
no warranty, representation or guarantee regarding the suitability of its
products for any particular purpose, nor does M/A-COM assume any liability
whatsoever arising out of the use or application of any product(s) or
information.
• North America Tel: 800.366.2266 / Fax: 978.366.2266
• Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300
• Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298
Visit www.macom.com for additional data sheets and product information.
5 Page | ||
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