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PDF BA01232 Datasheet ( Hoja de datos )

Número de pieza BA01232
Descripción GaAs RF amplifier designed
Fabricantes Mitsubishi Electric Semiconductor 
Logotipo Mitsubishi Electric Semiconductor Logotipo

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BA01232 Hoja de datos, Descripción, Manual
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Preliminary
Specifications are subject to change without notice.
DESCRIPTION
The BA01232 is GaAs RF amplifier designed for
W-CDMA hand-held phone.
MITSUBISHI SEMICONDUCTOR
BA01232
HBT HYBRID IC
OUTLINE DRAWING
Unit : millimeters
FEATURES
Low voltage Vcc=3.5V
High power Po=26.5dBm
@19201980MHz
High gain Gp=27.5dB
@Po=26.5dBm
2stage amplifier
Internal input and output matching
Small size package 4x4x1.2mm
1.2
APPLICATION
W-CDMA(UTRA/FDD) mobile transmitter
(UE Power Class 3).
ABSOLUTE MAXIMUM RATINGS (Ta=25°C)
Symbol
Vcc
Pin
Tc(op)
Tstg
Parameter
Supply voltage of HPA
Input power
Operating case temp.
Storage temp.
Condition
ZG=ZL=50
*Note : Each maximum rating is guaranteed independently .
Ratings*
6
7
-20 +85
-30 +95
Unit
V
dBm
°C
°C
ELECTRICAL CHARACTERISTICS(Ta=25°C)
Symbol
Parameter
Test conditions**
f Frequency
Icqt Idle current
Ict Total current
PAE
Power added efficiency
Pin Input Power
ρin
ACLR
Return loss
Adjacent channel leakage power
at 5MHz
Adjacent channel leakage power
at 10MHz
2Sp/3Sp
2nd/3rd harmonics
RX noise
RX band noise
No RF input
Po=26.5dBm
Vc1=Vc2=3.5V
Vref=2.9V
Vcb=2.9V
Limits
Unit
MIN TYP MAX
1920
1980 MHz
35 mA
252 mA
50 %
-1.0 dBm
-6 dB
-41 -38 dBc
-54
-140
-48 dBc
-30 dBc
dBm/Hz
**NOTE : ZG=ZL=50
3.84Mcps spreading, HPSK.
Mitsubishi Electric Corporation puts the maximum effort into making semiconductor products better and reliable, but there is always the possibility
that trouble may occur with them. Trouble with semiconductors may lead to personal injury, appropriate measures such as (i)placement of
substitutive, auxiliary, circuits, (ii)use of non-flammable material or (iii)prevention against any malfunction or mishap.
MITSUBISHI ELECTRIC CORP.
Feb.,04

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